TK3R1P04PL

MOSFETs Silicon N-channel MOS (U-MOS�-H) TK3R1P04PL 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 19 nC (typ.) (3) Small output charge: Qoss = 42 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (6) Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK3R1P04PL DPAK 1: Gate 2: Drain (heatsink) 3: Source ©2016-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2017-04 2021-01-29 Rev.4.0 TK3R1P04PL 4. Absolute Maximum Ratings (Note) (Ta = 25 � unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) VDSS 40 V VGSS ±20 (Tc = 25 �) (Note 1) ID 58 A Drain current (DC) Drain current (pulsed) Power dissipation (Silicon limit) (Note 1), (Note 2) ID (t = 100 µs) (Note 1) IDP (Tc = 25 �) PD 130 400 87 W Single-pulse avalanche energy (Note 3) EAS 65 mJ Single-pulse avalanche current Channel temperature Storage temperature (Note 3) IAS Tch Tstg 58 A 175 � -55 to 175 � Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even...