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BYM63 Dataheets PDF



Part Number BYM63
Manufacturers NXP
Logo NXP
Description Ripple blocking diode
Datasheet BYM63 DatasheetBYM63 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BYM63 Ripple blocking diode Product specification Supersedes data of December 1995 File under Discrete Semiconductors, SC01 1996 Jun 10 Philips Semiconductors Product specification Ripple blocking diode FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed minimum turn-on time for absorbing forward current transients and oscillations • Specially designed as rectif.

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DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BYM63 Ripple blocking diode Product specification Supersedes data of December 1995 File under Discrete Semiconductors, SC01 1996 Jun 10 Philips Semiconductors Product specification Ripple blocking diode FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed minimum turn-on time for absorbing forward current transients and oscillations • Specially designed as rectifier in the auxiliary power supply in e.g. switched mode power supplies • Available in ammo-pack. • Also available with preformed leads for easy insertion. Fig.1 Simplified outline (SOD64) and symbol. DESCRIPTION Rugged glass SOD64 package, using a high temperature alloyed construction. BYM63 This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. 2/3 page k (Datasheet) a MAM104 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF(AV) PARAMETER repetitive peak reverse voltage continuous reverse voltage average forward current averaged over any 20 ms period; Ttp = 55 °C; lead length = 10 mm; see Fig.2; see also Fig.4 averaged over any 20 ms period; Tamb = 65 °C; PCB mounting (Fig.8); see Fig.3; see also Fig.4 IFRM IFSM repetitive peak forward current non-repetitive peak forward current Ttp = 55 °C Tamb = 65 °C t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax CONDITIONS MIN. − − − MAX. 300 300 2.4 V V A UNIT − 1.0 A − − − 21 8.5 45 A A A Tstg Tj storage temperature junction temperature −65 −65 +175 +175 °C °C 1996 Jun 10 2 Philips Semiconductors Product specification Ripple blocking diode ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current CONDITIONS IF = 2 A; Tj = Tj max; see Fig.5 IF = 2 A; see Fig.5 VR = VRRMmax; see Fig.6 VR = VRRMmax; Tj = 165 °C; see Fig.6 tfr ton forward recovery time turn-on time when switched to IF = 5 A in 50 ns; see Fig.9 when switched from VF = 0 V to VF = 3 V; measured between 10% and 90% of IF max; see Fig.11 when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.11 f = 1 MHz; VR = 0 V; see Fig.7 MIN. − − − − − 400 TYP. − − − − − − MAX. 1.34 2.30 10 150 1.5 − BYM63 UNIT V V µA µA µs ns trr reverse recovery time − − 150 ns Cd diode capacitance − 65 − pF THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.8. For more information please refer to the ‘General Part of Handbook SC01.’ PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS lead length = 10 mm note 1 VALUE 25 75 UNIT K/W K/W 1996 Jun 10 3 Philips Semiconductors Product specification Ripple blocking diode GRAPHICAL DATA 3 MBD421 BYM63 handbook, halfpage handbook, halfpage 2.0 MBD416 I F(AV) (A) 2 lead length 10 mm I F(AV) (A) 1.6 1.2 0.8 1 0.4 0 0 100 Ttp (o C) 200 0 0 100 T amb ( C) o 200 a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.8. Switched mode application. Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Fig.3 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). 5 P (W) 4 a=3 2.5 MBD430 MBD426 handbook, halfpage 10 2 1.57 1.42 IF (A) 8 3 6 2 4 1 2 0 0 0.6 1.2 1.8 2.4 I F(AV)(A) 0 0 2 VF (V) 4 a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Fig.4 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. Fig.5 Forward current as a function of forward voltage; maximum values. 1996 Jun 10 4 Philips Semiconductors Product specification Ripple blocking diode BYM63 103 handbook, halfpage IR (µA) 102 MGC549 10 2 handbook, halfpage MBD435 Cd (pF) 10 10 1 0 100 Tj (°C) 200 1 1 10 10 2 V R (V) 10 3 VR = VRRMmax. f = 1 MHz; Tj = 25 °C. Fig.6 Reverse current as a function of junction temperature; maximum values. Fig.7 Diode capacitance as a function of reverse voltage; typical values. handbook, halfpage 50 25 handbook, halfpage V MGC500 F 7 50 t fr IF 100% 110% t 2 3 MGA200 10% t Dimensions in mm. Fig.8 Device mounted on a printed-circuit board. Fig.9 Forward recovery time definition. 1996 Jun 10 5 Philips Semiconductors Product specification Ripple blocking diode BYM63 handbook, full pagewidth 3V DUT VF (V) 0 50 Ω 10 Ω IF (A) 0 ton 10% MBH530 100% 90% Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 10 ns. Fig.10 Test circuit and turn-on time waveform .


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