BYP102

BYP 102 FRED Diode Fast recovery epitaxial diode Soft recovery characteristics Type BYP 102 VRRM 1000V IFRMS 50A trr 130ns Package TO-218 AD Ordering Code C67047-A2071-A2 Maximum Ratings Parameter Mean forward current Symbol Values 28 Unit A 50 125 IFAV IFRMS IFSM IFRM 280 ∫i2dt 78 TC = 90 °C, D = 0.5 RMS forward current Surge forward current, sine halfwave, aperiodic Tj = 100 °C, f = 50 Hz Repetitive peak forward current Tj = 100 °C, tp ≤ 10 µs i 2t value Tj = 100 °C, tp = 10 ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation A2s 1000 1000 W 75 -40 ... + 150 -40 ... + 150 ≤ 0.8 ≤ 46 E 40 / 150 / 56 K/W °C V VRRM VRSM Ptot Tj Tstg RthJC RthJA - TC = 90 °C Chip or operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip-ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group 1 12.96 BYP 102 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Forward voltage drop Values typ. max. Unit VF 1.65 1.9 1.5 1.7 0.01 0.05 0.15 2.35 - V IF = 20 A, Tj = 25 °C IF = 30 A, Tj = 25 °C IF = 20 A, Tj = 100 °C IF = 30 A, Tj = 100 °C Reverse current IR 0.25 - mA VR = 1000 V, Tj = 25 °C VR = 1000 V, Tj = 100 °C VR = 1000 V, Tj = 150 °C AC Characteristics Reverse recovery charge Qrr 4.5 - µC IF = 28 A, VCC = 300 V, diF/dt = -1000 A/µs Tj = 100 °C Peak reverse recovery current IRRM 50 - A IF ...