BYQ28E Ultrafast Rectifier Datasheet

BYQ28E Datasheet, PDF, Equivalent


Part Number

BYQ28E

Description

Dual Common Cathode Ultrafast Rectifier

Manufacture

Vishay Siliconix

Total Page 5 Pages
Datasheet
Download BYQ28E Datasheet


BYQ28E
BYQ28E-xxx, BYQ28EF-xxx, BYQ28EB-xxx, UG10xCT, UGF10xCT, UGB10xCT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Ultrafast Rectifier
TO-220AB
ITO-220AB
3
2
1
BYQ28E, UG10
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
123
BYQ28EF, UGF10
PIN 1
PIN 2
PIN 3
FEATURES
• Power pack
Available
• Glass passivated pellet chip junction
• Ultrafast recovery times
• Soft recovery characteristics
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C (for TO-263AB
package)
• Solder dip 275 °C max. 10 s, per JESD 22-B106
(for TO-220AB and ITO-220AB package)
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
2
1
BYQ28EB, UGB10
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
trr
VF
TJ max.
Package
2 x 5.0 A
100 V to 200 V
55 A
25 ns
0.895 V
150 °C
TO-220AB, ITO-220AB,
TO-263AB
Diode variations
Common cathode
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
power supplies, freewheeling diodes, DC/DC converters
and polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
UG10BCT UG10CCT UG10DCT
SYMBOL
BYQ28E-100 BYQ28E-150 BYQ28E-200
Maximum repetitive peak reverse voltage
VRRM
100
150
200
Working peak reverse voltage
VRWM
100
150
200
Maximum DC blocking voltage
VDC 100 150 200
total device
Maximum average forward rectified current at TC = 100 °C
per diode
IF(AV)
10
5.0
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
55
Non-repetitive peak reverse current per diode at tp = 100 μs
Electrostatic discharge capacitor voltage,
human body model: C = 250 pF, R = 1.5 k
IRSM
VC
0.2
8
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
TJ, TSTG
VAC
-40 to +150
1500
UNIT
V
V
V
A
A
A
kV
°C
V
Revision: 23-Feb-16
1 Document Number: 88549
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BYQ28E
BYQ28E-xxx, BYQ28EF-xxx, BYQ28EB-xxx, UG10xCT, UGF10xCT, UGB10xCT
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward voltage
per diode
Maximum reverse current per diode at
working peak reverse voltage
IF = 10 A
IF = 5 A
TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
TJ = 100 °C
Maximum reverse recovery time per diode IF = 1.0 A, dI/dt = 100 A/μs, VR = 30 V, Irr = 0.1 IRM
Maximum reverse recovery time per diode IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
Maximum stored charge per diode
IF = 2 A, dI/dt = 20 A/μs, VR = 30 V, Irr = 0.1 IRM
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
SYMBOL
VF (1)
IR
trr
trr
Qrr
VALUE
1.25
1.10
0.895
10
200
25
20
9
UNIT
V
μA
ns
ns
nC
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
UG10
BYQ28E
Typical thermal resistance per diode, junction to ambient
RJA
50
Typical thermal resistance per diode, junction to case
RJC
4.5
UGF10
BYQ28EF
55
6.7
UGB10
BYQ28EB
50
4.8
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
BYQ28E-200-E3/45
1.80
ITO-220AB
BYQ28EF-200-E3/45
1.95
TO-263AB
BYQ28EB-200-E3/45
1.77
TO-263AB
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
BYQ28EB-200-E3/81
BYQ28E-200HE3/45 (1)
BYQ28EF-200HE3/45 (1)
BYQ28EB-200HE3/45 (1)
BYQ28EB-200HE3/81 (1)
1.77
1.80
1.95
1.77
1.77
Note
(1) Automotive grade
PACKAGE CODE
45
45
45
81
45
45
45
81
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
50/tube
50/tube
800/reel
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
Tube
Tube
Tape and reel
Revision: 23-Feb-16
2 Document Number: 88549
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Features BYQ28E-xxx, BYQ28EF-xxx, BYQ28EB-xxx, UG 10xCT, UGF10xCT, UGB10xCT www.vishay.c om Vishay General Semiconductor Dual Common Cathode Ultrafast Rectifier TO- 220AB ITO-220AB 3 2 1 BYQ28E, UG10 P IN 1 PIN 2 PIN 3 CASE TO-263AB K 1 23 BYQ28EF, UGF10 PIN 1 PIN 2 PIN 3 FEATURES • Power pack Available • Glass passivated pellet chip juncti on • Ultrafast recovery times • S oft recovery characteristics • Low s witching losses, high efficiency • H igh forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB and ITO-220 AB package) • AEC-Q101 qualified Material categorization: for definiti ons of compliance please see www.vishay .com/doc?99912 2 1 BYQ28EB, UGB10 P IN 1 K PIN 2 HEATSINK PRIMARY CHARA CTERISTICS IF(AV) VRRM IFSM trr VF TJ max. Package 2 x 5.0 A 100 V to 200 V 55 A 25 ns 0.895 V 150 °C TO-220AB, ITO-220AB, TO-263AB Diode variations Common cat.
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