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BYT43G Dataheets PDF



Part Number BYT43G
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description Very Fast Soft Recovery Rectifier
Datasheet BYT43G DatasheetBYT43G Datasheet (PDF)

BYT43 Vishay Telefunken Very Fast Soft Recovery Rectifier Features D D D D D Miniature axial leaded Glass passivated Hermetically sealed glass envelope Low reverse current High reverse voltage Applications TV and monitor SMPS Electronic ballast 95 10526 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage g =Repetitive peak reverse voltage Test Conditions Type BYT43A BYT43B BYT43D BYT43G BYT43J BYT43K BYT43M Symbol VR =VRRM Value 50 100 200 400 600 800 1000 30 1 –55...+175 Unit V V V.

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BYT43 Vishay Telefunken Very Fast Soft Recovery Rectifier Features D D D D D Miniature axial leaded Glass passivated Hermetically sealed glass envelope Low reverse current High reverse voltage Applications TV and monitor SMPS Electronic ballast 95 10526 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage g =Repetitive peak reverse voltage Test Conditions Type BYT43A BYT43B BYT43D BYT43G BYT43J BYT43K BYT43M Symbol VR =VRRM Value 50 100 200 400 600 800 1000 30 1 –55...+175 Unit V V V V V V V A A Peak forward surge current Average forward current Junction and storage temperature range tp=8.3 ms, half sinewave Lead length l = 10 mm, TL = 25°C IFSM IFAV Tj=Tstg °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions Lead length l = 10 mm, TL = constant on PC board with spacing 25mm Symbol RthJA RthJA Value 60 110 Unit K/W K/W Document Number 86026 Rev. 3, 24-Jun-98 www.vishay.de • FaxBack +1-408-970-5600 1 (4) BYT43 Vishay Telefunken Electrical Characteristics Tj = 25_C Parameter Forward voltage Test Conditions IF = 1 A Type BYT43A –BYT43J BYT43K –BYT43M Symbol VF VF IR IR BYT43A BYT43B BYT43D BYT43G BYT43J BYT43K BYT43M BYT43A –BYT43J BYT43K –BYT43M V(BR)R V(BR)R V(BR)R V(BR)R V(BR)R V(BR)R V(BR)R trr trr 50 100 200 400 600 800 1000 50 75 Min Typ Max 1.6 2 5 150 Unit V V Reverse current Reverse breakdown voltage g VR=VRRM VR=VRRM, Tj=150°C IR=100mA mA mA V V V V V V V ns ns Reverse recovery time IF=0.5A, IR=1A, iR=0.25A Characteristics (Tj = 25_C unless otherwise specified) R thJA – Therm. Resist. Junction / Ambient ( K/W ) 120 I FAV– Average Forward Current ( A ) 100 80 60 l 40 20 0 0 5 10 15 TL=constant 20 25 30 96 12144 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160 180 Tamb – Ambient Temperature ( °C ) BYT43M BYT43J BYT43A VR = VR RM f 1kHz RthJA 110K/W PC Board v v l 96 12151 l – Lead Length ( mm ) Figure 1. Max. Thermal Resistance vs. Lead Length Figure 2. Max. Average Forward Current vs. Ambient Temperature www.vishay.de • FaxBack +1-408-970-5600 2 (4) Document Number 86026 Rev. 3, 24-Jun-98 BYT43 Vishay Telefunken 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 96 12145 100.000 BYT43A VR = VR RM f 1kHz RthJA 60K/W l=10mm I FAV– Average Forward Current ( A ) IF – Forward Current ( A ) v v 10.000 Tj = 175°C 1.000 Tj = 25°C 0.100 0.010 BYT43A –BYT43J 0.001 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 96 12143 BYT43J BYT43M 20 40 60 80 100 120 140 160 180 Tamb – Ambient Temperature ( °C ) VF – Forward Voltage ( V ) Figure 3. Max. Average Forward Current vs. Ambient Temperature 1000 VR = VRRM I R – Reverse Current ( mA ) Figure 5. Max. Forward Current vs. Forward Voltage 100.000 10.000 100 I F – Forward Current ( A ) Tj = 175°C 1.000 Tj = 25°C 0.100 0.010 BYT43K –BYT43M 0.001 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 10 1 25 96 12146 50 75 100 125 150 175 96 12142 Tj – Junction Temperature ( °C ) VF – Forward Voltage ( V ) Figure 4. Max. Reverse Current vs. Junction Temperature Figure 6. Max. Forward Current vs. Forward Voltage Dimensions in mm Standard Glass Case DOT 30 B Weight max. 0.5 g ∅ 3 max. Cathode Identification 95 10524 technical drawings according to DIN specifications ∅ 0.82 max. 26 min. 4.2 max. 26 min. Document Number 86026 Rev. 3, 24-Jun-98 www.vishay.de • FaxBack +1-408-970-5600 3 (4) BYT43 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do.


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