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BYT71F-800

STMicroelectronics

FAST RECOVERY RECTIFIER DIODES

® BYT71(F)-800 FAST RECOVERY RECTIFIER DIODES . . . FEATURES HIGH VOLTAGE CAPABILITY FAST AND SOFT RECOVERY INSULATED...


STMicroelectronics

BYT71F-800

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Description
® BYT71(F)-800 FAST RECOVERY RECTIFIER DIODES . . . FEATURES HIGH VOLTAGE CAPABILITY FAST AND SOFT RECOVERY INSULATED PACKAGE : insulating voltage = 2000VDC capacitance = 12 pF K A K A DESCRIPTION Single chip rectifier suited for power conversion and polarity protection applications. This device is packaged in TO220AC and in ISOWATT220AC. TO220AC (Plastic) ISOWATT220AC (Plastic) ABSOLUTE MAXIMUM RATINGS Symbol IF(RMS) IF(AV) RMS on-state current Average forward current δ = 0.5 TO220AC ISOWATT220AC Tc=130°C Tc=105°C tp=10ms sinusoidal Parameter Value 12 6 6 90 - 65 to + 150 - 65 to + 150 A °C °C Unit A A IFSM Tstg Tj Surge non repetitive forward current Storage and junction temperature range Symbol Parameter BYT71-(F) 600 800 800 Unit VRRM Repetitive peak off-state voltage 600 V August 1998 Ed : 3A 1/7 BYT71(F)-800 THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Parameter TO220AC ISOWATT220AC Value 2.3 4.9 Unit °C/W ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol IR ** Tj = 25°C Tj = 100°C VF * Tj = 100°C IF = 6 A Test Conditions VR = VRRM Min. Typ. Max. 20 1 1.3 1.4 Unit µA mA V Tj = 25°C IF = 6 A Pulse test : * tp = 380 µs, duty cycle < 2 % ** tp = 5 ms, duty cycle < 2 % RECOVERY CHARACTERISTICS Symbol trr Tj = 25°C Test Conditions IF = 1A VR = 30V dIF/dt = -15A/µs Min. Typ. Max. 300 Unit ns To evaluate the conduction losses use the following equations : P = 1.15 x IF(AV) + 0.025 x IF2 (RMS) 2/7 BYT71(F)-800 Fig.1 : Average forwar...




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