BYV10-20

DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 BYV10 series Schottky barrier diodes Product specification Supersedes data of April 1992 1996 May 13 Philips Semiconductors Product specification Schottky barrier diodes FEATURES Low switching losses Fast recovery time Guard ring protected Hermetically sealed leaded glass package. APPLICATIONS Low power, switched-mode power supplies Rectifying Polarity protection. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYV10-20 BYV10-30 BYV10-40 IF(AV) Tstg Tj Note 1. Refer to SOD81 standard mounting conditions. average forward current storage temperature junction temperature note 1 PARAMETER repetitive peak reverse voltage − − − − −65 − CONDITIONS handbook, 4 columns BYV10 series DESCRIPTION The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating ImplotecTM(1) technology. (1) Implotec is a trademark of Philips. k a MAM218 Fig.1 Simplified outline (SOD81) and symbol. MIN. MAX. 20 30 40 1 +150 125 V V V A UNIT °C °C 1996 May 13 2 Philips Semiconductors Product specification Schottky barrier diodes ELECTRICAL CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage IF = 0.1 A IF = 1 A IF = 3 A IR Cd Note 1. Pulsed test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOD81 standard mountin...