®
BYV 10- 40
SMALL SIGNAL SCHOTTKY DIODES
DESCRIPTION Metal to silicon rectifier diodes in glass case featuring very l...
®
BYV 10- 40
SMALL SIGNAL
SCHOTTKY DIODES
DESCRIPTION Metal to silicon rectifier diodes in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.
DO 41 (Glass)
ABSOLUTE RATINGS (limiting values)
Symbol IF(AV) IFSM Average Forward Current* Surge non Repetitive Forward Current Parameter Tamb = 60 °C Tamb = 25°C tp = 10ms Tamb = 25°C tp = 300µs Tstg Tj TL Storage and Junction Temperature Range Maximum Lead Temperature for Soldering during 10s at 4mm from Case Parameter Repetitive Peak Reverse Voltage Value 1 25 Sinusoidal Pulse 50 Rectangular Pulse - 65 to + 150 - 65 to + 125 230 °C °C °C Unit A A
Symbol VRRM
BYV 10-40 40
Unit V
* On infinite heatsink with 4mm lead length
THERMAL RESISTANCE
Symbol Rth(j-a) Junction-ambient* Test Conditions Value 110 Unit °C/W
* On infinite heatsink with 4mm lead length
August 1998 Ed : 1A
1/4
BYV 10-40
ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS
Symbol IR * Tj = 25°C Tj = 100°C VF * IF = 1A IF = 3A
* Pulse test: tp ≤ 300µs δ < 2%.
Test Conditions VR = VRRM
Min.
Typ.
Max. 0.5 10
Unit mA
Tj = 25°C
0.55 0.85
V
DYNAMIC CHARACTERISTICS
Symbol C Tj = 25°C Test Conditions VR = 0 Min. Typ. 220 Max. Unit pF
Forward current flow in a
Schottky rectifier is due to majority carrier conduction. So reverse recovery is not affected by stored charge as in conventional PN junction diodes. Nevertheless, when the d...
