Document
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
BYV160 Ultra fast low-loss rectifier
Product specification 2000 Feb 01
Philips Semiconductors
Product specification
Ultra fast low-loss rectifier
FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Available in ammo-pack. DESCRIPTION Rugged glass SOD57 package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
BYV160
3 page k (Datasheet)
Fig.1 Simplified outline (SOD57) and symbol.
a
MAM047
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF(AV) PARAMETER repetitive peak reverse voltage continuous reverse voltage average forward current Ttp = 60 °C; lead length = 10 mm; see Fig.5; averaged over any 20 ms period; see Fig.6 t = 10 ms half sine wave; Tj = 25 °C; VR = VRRMmax see Fig.7 CONDITIONS − − − MIN. MAX. 600 600 2 V V A UNIT
IFSM Tstg Tj
non-repetitive peak forward current storage temperature junction temperature
− −65 −65
40 +175 +175
A °C °C
ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF IR trr PARAMETER forward voltage reverse current reverse recovery time CONDITIONS IF = 2 A; Tj = Tj max; see Fig.2 IF = 2 A; see Fig.2 VR = VRRMmax; see Fig.3 VR = VRRMmax; Tj = 150 °C; see Fig.3 when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A MAX. 1.00 1.20 5 150 50 V V µA µA ns UNIT
2000 Feb 01
2
Philips Semiconductors
Product specification
Ultra fast low-loss rectifier
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS lead length = 10 mm
BYV160
VALUE 46 100
UNIT K/W K/W
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.8. For more information please refer to the ‘General Part of associated Handbook’.
2000 Feb 01
3
Philips Semiconductors
Product specification
Ultra fast low-loss rectifier
GRAPHICAL DATA
BYV160
handbook, halfpage
10
MGS382
IF (A)
102 handbook, halfpage IR (µA)
MGS385
Tj = 175 °C
8
Tj = 175 °C 100 °C 25 °C
10
6 1 4 10−1 2
100 °C
25 °C 0 0 0.4 0.8 1.2 1.6 VF (V) 2 10− 2 0
200
400
VR (V)
600
Fig.2
Forward current as a function of forward voltage; typical values.
Fig.3
Reverse current as a function of reverse voltage; typical values.
102 handbook, halfpage Cd (pF) Tj = 25 °C 10
MGL717
handbook, halfpage
3.0
MGL714
IF(AV) (A) lead length = 10 mm 2.0
1.0
1
1
10
VR (V)
102
0.0 0 40 80 120 160 200 Ttp (°C)
Fig.5 Fig.4 Diode capacitance as a function of reverse voltage; typical values.
Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage).
2000 Feb 01
4
Philips Semiconductors
Product specification
Ultra fast low-.