Fast soft-recovery controlled avalanche rectifier
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
BYV2100 Fast soft-recovery controlled avalanche rectifi...
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
BYV2100 Fast soft-recovery controlled avalanche rectifier
Product specification 1996 Oct 07
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifier
FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy absorption capability Available in ammo-pack. DESCRIPTION Rugged glass SOD57 package, using a high temperature alloyed construction.
BYV2100
This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
2/3 page k (Datasheet)
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF(AV) PARAMETER repetitive peak reverse voltage continuous reverse voltage average forward current
a
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
CONDITIONS
MIN. − −
MAX. 100 100 2.0 V V A
UNIT
Ttp = 80 °C; lead length = 10 mm; averaged over any 20 ms period; see Fig.2; see also Fig.4 Tamb = 60 °C; PCB mounting (see Fig.12); averaged over any 20 ms period; see Fig.3; see also Fig.4
−
−
1.3
A
IFRM IFSM
repetitive peak forward current non-repetitive peak forward current
Ttp = 80 °C; see Fig.6 Tamb = 60 °C; see Fig.7 t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax L = 120 mH; Tj = Tj max prior to surge; inductive load switched off
− − −
18 12 50
A A A
ERSM Tstg Tj
non-repetit...
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