BYV26A, BYV26B, BYV26C, BYV26D, BYV26E
www.vishay.com
Vishay Semiconductors
Ultra-Fast Avalanche Sinterglass Diode
949539
MECHANICAL DATA Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg
FEATURES • Glass passivated junction • Hermetically sealed package • Very low switching losses • Low reverse current • High reverse voltage • Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS • Switched mode power supplies • High-frequency inverter circuits
ORDERING INFORMATION (Example)
DEVICE NAME ORDERING CODE
TAPED UNITS
BYV26E
BYV26E-TR
5000 per 10" tape and reel
BYV26E
BYV26E-TAP
5000 per ammopack
MINIMUM ORDER QUANTITY 25 000 25 000
PARTS TABLE
PART BYV26A BYV26B BYV26C BYV26D BYV26E
TYPE DIFFERENTIATION
VR = 200 V; IF(AV) = 1 A VR = 400 V; IF(AV) = 1 A VR = 600 V; IF(AV) = 1 A VR = 800 V; IF(AV) = 1 A VR = 1000 V; IF(AV) = 1 A
PACKAGE SOD-57 SOD-57 SOD-57 SOD-57 SOD-57
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
Reverse voltage = repetitive peak reverse voltage
See electrical characteristics
Peak forward surge current Average forward current Non repetitive reverse avalanche energy Junction and storage temperature range
tp = 10 ms, half sine wave I(BR)R = 1 A, inductive load
BYV26A BYV26B BYV26C BYV26D BYV26E
VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = VRRM
IFSM IF(AV) ER Tj = Tstg
VALUE 200 400 600 800 1000 30 1 10
- 55 to + 175
UNIT V V V V V A A mJ °C
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Junction ambient
l = 10 mm, TL = constant
RthJA
VALUE 45
UNIT K/W
Rev. 1.8, 04-Sep-12
1 Document Number: 86040
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYV26A, BYV26B, BYV26C, BYV26D, BYV26E
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART SYMBOL MIN.
Forward voltage Reverse current Reverse breakdown voltage
Reverse recovery time
IF = 1 A IF = 1 A, Tj = 175 °C
VR = VRRM VR = VRRM, Tj = 150 °C
IR = 100 μA
IF = 0.5 A, IR = 1 A, iR = 0.25 A
BYV26A BYV26B BYV26C BYV26D BYV26E BYV26A BYV26B BYV26C BYV26D BYV26E
VF VF IR IR V(BR)R V(BR)R V(BR)R V(BR)R V(BR)R trr trr trr trr trr
300 500 700 900 1100 -
TYP. -
MAX. 2.5 1.3 5 100 30 30 30 75 75
UNIT V V μA μA V V V V V ns ns ns ns ns
TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)
PR - Max. Reverse Power Dissipation (mW)
600
500 RthJA = 45 K/W RthJA = 100 K/W
400
VR = VRRM 200 V
400 V 300
600 V
200 800 V
100
1000 V 0
0 40 80 120 160 200
959728
Tj - Junction Temperature (°C)
Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature
1.2
IFAV - Average Forward Current (A)
1.0
RthJA = 45 K/W 0.8
0.6
0.4 RthJA = 100 K/W
0.2
0 0
959730
40 80 120 160 200 Tamb - Ambient Temperature (°C)
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
1000 100
VR = VRRM
IR - Reverse Current (μA)
10
1
0.1 0
959729
40 80 120 160 Tj - Junction Temperature (°C)
200
Fig. 2 - Max. Reverse Current vs. Junction Temperature
IF - Forward Current (A)
10 Tj = 175 °C
1
Tj = 25 °C 0.1
0.01
0.001 0
959731
1 2 34 5 6 VF - Forward Voltage (V)
7
Fig. 4 - Max. Reverse Current vs. Junction Temperature
Rev. 1.8, 04-Sep-12
2 Document Number: 86040
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CD - Diode Capacitance (pF) 0.82 (0.032) max.
BYV26A, BYV26B, BYV26C, BYV26D, BYV26E
www.vishay.com
Vishay Semiconductors
CD - DiodeCapacitance (pF)
40 f = 1 MHz
35
30 BYV26C
25
20
15
10
5
0 0.1
16380
1 10 VR - Reverse Voltage (V)
100
Fig. 5 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
40 f = 1 MHz
35
30 BYV26E
25
20
15
10
5
0 0.1
16381
1 10 VR - Reverse Voltage (V)
100
Fig. 6 - Diode Capacitance vs. Reverse Voltage
3.6 (0.142) max.
20543
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
Rev. 1.8, 04-Sep-12
3 Document Number: 86040
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
Legal Disclaimer Notice
V.