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BYV26D Dataheets PDF



Part Number BYV26D
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description Ultra-Fast Avalanche Sinterglass Diode
Datasheet BYV26D DatasheetBYV26D Datasheet (PDF)

BYV26A, BYV26B, BYV26C, BYV26D, BYV26E www.vishay.com Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode 949539 MECHANICAL DATA Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg FEATURES • Glass passivated junction • Hermetically sealed package • Very low switching losses • Low reverse current • High reverse voltage • Material categorization: For definitions of.

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BYV26A, BYV26B, BYV26C, BYV26D, BYV26E www.vishay.com Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode 949539 MECHANICAL DATA Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg FEATURES • Glass passivated junction • Hermetically sealed package • Very low switching losses • Low reverse current • High reverse voltage • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Switched mode power supplies • High-frequency inverter circuits    ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS BYV26E BYV26E-TR 5000 per 10" tape and reel BYV26E BYV26E-TAP 5000 per ammopack MINIMUM ORDER QUANTITY 25 000 25 000 PARTS TABLE PART BYV26A BYV26B BYV26C BYV26D BYV26E TYPE DIFFERENTIATION VR = 200 V; IF(AV) = 1 A VR = 400 V; IF(AV) = 1 A VR = 600 V; IF(AV) = 1 A VR = 800 V; IF(AV) = 1 A VR = 1000 V; IF(AV) = 1 A PACKAGE SOD-57 SOD-57 SOD-57 SOD-57 SOD-57 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL Reverse voltage = repetitive peak reverse voltage See electrical characteristics Peak forward surge current Average forward current Non repetitive reverse avalanche energy Junction and storage temperature range tp = 10 ms, half sine wave I(BR)R = 1 A, inductive load BYV26A BYV26B BYV26C BYV26D BYV26E VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = VRRM IFSM IF(AV) ER Tj = Tstg VALUE 200 400 600 800 1000 30 1 10 - 55 to + 175 UNIT V V V V V A A mJ °C MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Junction ambient l = 10 mm, TL = constant RthJA VALUE 45 UNIT K/W Rev. 1.8, 04-Sep-12 1 Document Number: 86040 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYV26A, BYV26B, BYV26C, BYV26D, BYV26E www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. Forward voltage Reverse current Reverse breakdown voltage Reverse recovery time IF = 1 A IF = 1 A, Tj = 175 °C VR = VRRM VR = VRRM, Tj = 150 °C IR = 100 μA IF = 0.5 A, IR = 1 A, iR = 0.25 A BYV26A BYV26B BYV26C BYV26D BYV26E BYV26A BYV26B BYV26C BYV26D BYV26E VF VF IR IR V(BR)R V(BR)R V(BR)R V(BR)R V(BR)R trr trr trr trr trr 300 500 700 900 1100 - TYP. - MAX. 2.5 1.3 5 100 30 30 30 75 75 UNIT V V μA μA V V V V V ns ns ns ns ns TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PR - Max. Reverse Power Dissipation (mW) 600 500 RthJA = 45 K/W RthJA = 100 K/W 400 VR = VRRM 200 V 400 V 300 600 V 200 800 V 100 1000 V 0 0 40 80 120 160 200 959728 Tj - Junction Temperature (°C) Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature 1.2 IFAV - Average Forward Current (A) 1.0 RthJA = 45 K/W 0.8 0.6 0.4 RthJA = 100 K/W 0.2 0 0 959730 40 80 120 160 200 Tamb - Ambient Temperature (°C) Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 1000 100 VR = VRRM IR - Reverse Current (μA) 10 1 0.1 0 959729 40 80 120 160 Tj - Junction Temperature (°C) 200 Fig. 2 - Max. Reverse Current vs. Junction Temperature IF - Forward Current (A) 10 Tj = 175 °C 1 Tj = 25 °C 0.1 0.01 0.001 0 959731 1 2 34 5 6 VF - Forward Voltage (V) 7 Fig. 4 - Max. Reverse Current vs. Junction Temperature Rev. 1.8, 04-Sep-12 2 Document Number: 86040 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CD - Diode Capacitance (pF) 0.82 (0.032) max. BYV26A, BYV26B, BYV26C, BYV26D, BYV26E www.vishay.com Vishay Semiconductors CD - DiodeCapacitance (pF) 40 f = 1 MHz 35 30 BYV26C 25 20 15 10 5 0 0.1 16380 1 10 VR - Reverse Voltage (V) 100 Fig. 5 - Diode Capacitance vs. Reverse Voltage PACKAGE DIMENSIONS in millimeters (inches): SOD-57 40 f = 1 MHz 35 30 BYV26E 25 20 15 10 5 0 0.1 16381 1 10 VR - Reverse Voltage (V) 100 Fig. 6 - Diode Capacitance vs. Reverse Voltage 3.6 (0.142) max. 20543 26 (1.024) min. 4 (0.157) max. 26 (1.024) min. Rev. 1.8, 04-Sep-12 3 Document Number: 86040 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com Legal Disclaimer Notice V.


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