MOS FET Power Amplifier Module
PF08127B
MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone
ADE-208-1606 (Z)
Rev.0 Oct. ...
Description
PF08127B
MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone
ADE-208-1606 (Z)
Rev.0 Oct. 2002
Application
Triple band amplifier for E-GSM (880 MHz to 915 MHz), DCS1800/1900 (1710 MHz to 1785 MHz, 1850 MHz to 1910 MHz).
For 3.5 V & GPRS Class12 operation compatible
Features
All in one including output matching circuit Simple external circuit Simple power control High gain 3stage amplifier : 0 dBm input Typ Lead less thin & Small package : 8.0 × 10.0 mm Typ × 1.5 mm Max High efficiency : 55% Typ at 35.0 dBm for E-GSM
47% Typ at 32.5 dBm for DCS1800 47% Typ at 32.0 dBm for DCS1900
Pin Arrangement
RF-Q-8
8 7G6 5
1 2G3 4
1: Pin GSM 2: Vapc
3: Vdd1
4: Pout GSM 5: Pout DCS 6: Vdd2
7: Vctl
8: Pin DCS G: GND
PF08127B
Absolute Maximum Ratings *1
(Tc = 25°C)
Item
Symbol
Rating
Unit Remark
Supply voltage
Vdd 7.0
V at no-operation
5.0 V at operation (50 Ω load)
Supply current Vctl voltage
Idd GSM Idd DCS Vctl
...
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