diodes ultrafast. BYV29-400 Datasheet

BYV29-400 ultrafast. Datasheet pdf. Equivalent

Part BYV29-400
Description Rectifier diodes ultrafast
Feature Philips Semiconductors Product specification Rectifier diodes ultrafast FEATURES • Low forward vol.
Manufacture NXP
Datasheet
Download BYV29-400 Datasheet

Philips Semiconductors Product specification Rectifier dio BYV29-400 Datasheet
UG(F,B)8FT & UG(F,B)8GT, BYV29(F,B)-300 & BYV29(F,B)-400 Vis BYV29-400 Datasheet
BYV29–300M BYV29–400M BYV29–500M MECHANICAL DATA Dimensions BYV29-400M Datasheet
BYV29–300M BYV29–400M BYV29–500M MECHANICAL DATA Dimensions BYV29-400SMD Datasheet
Recommendation Recommendation Datasheet BYV29-400 Datasheet





BYV29-400
Philips Semiconductors
Rectifier diodes
ultrafast
Product specification
BYV29 series
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Low thermal resistance
SYMBOL
k
1
QUICK REFERENCE DATA
VR = 300 V/ 400 V/ 500 V
a VF 1.03 V
2
IF(AV) = 9 A
trr 60 ns
GENERAL DESCRIPTION
Ultra-fast, epitaxial rectifier diodes
intended for use as output rectifiers
in high frequency switched mode
power supplies.
The BYV29 series is supplied in the
conventional leaded SOD59
(TO220AC) package.
PINNING
PIN DESCRIPTION
1 cathode
2 anode
tab cathode
SOD59 (TO220AC)
tab
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
Tstg
Tj
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average forward current1
Repetitive peak forward current
Non-repetitive peak forward
current.
Storage temperature
Operating junction temperature
BYV29
square wave; δ = 0.5;
Tmb 123 ˚C
t = 25 µs; δ = 0.5;
Tmb 123 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
VRRM(max)
-
-
-
-
-
-
-
-40
-
-300
300
300
300
MAX.
-400
400
400
400
9
18
100
110
150
150
-500
500
500
500
UNIT
V
V
V
A
A
A
A
˚C
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
in free air.
MIN. TYP. MAX. UNIT
- - 2.5 K/W
- 60 - K/W
1 Neglecting switching and reverse current losses.
September 1998
1
Rev 1.300



BYV29-400
Philips Semiconductors
Rectifier diodes
ultrafast
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
VF Forward voltage
IR Reverse current
Qs Reverse recovery charge
trr Reverse recovery time
Irrm Peak reverse recovery current
Vfr Forward recovery voltage
CONDITIONS
IF = 8 A; Tj = 150˚C
IF = 8 A
IF = 20 A
VR = VRRM
VR = VRRM; Tj = 100 ˚C
IF = 2 A to VR 30 V;
dIF/dt = 20 A/µs
IF = 1 A to VR 30 V;
dIF/dt = 100 A/µs
IF = 10 A to VR 30 V;
dIF/dt = 50 A/µs; Tj = 100˚C
IF = 10 A; dIF/dt = 10 A/µs
Product specification
BYV29 series
MIN.
-
-
-
-
-
-
TYP.
0.90
1.05
1.20
2.0
0.1
40
MAX.
1.03
1.25
1.40
50
0.35
60
UNIT
V
V
V
µA
mA
nC
- 50 60 ns
- 4.0 5.5 A
- 2.5 -
V
I
F
dI
F
dt
t
rr
time
Q
s
I
R
I
rrm
10% 100%
Fig.1. Definition of trr, Qs and Irrm
IF
time
VF
VF
Fig.2. Definition of Vfr
V fr
time
15 PF / W
Vo = 0.8900 V
Rs = 0.0190 Ohms
10
0.1
BYV29
0.5
0.2
Tmb(max) / C
112.5
D = 1.0
125
5
I
tp
D=
tp
T
137.5
Tt
0 150
0
5 IF(AV) / A 10
15
Fig.3. Maximum forward dissipation PF = f(IF(AV));
square wave where IF(AV) =IF(RMS) x D.
12 PF / W
Vo = 0.89V
Rs = 0.019 Ohms
10
BYV29
2.2
8 2.8
4
6
Tmb(max) / C120
a = 1.57
1.9 125
130
135
4 140
2 145
0 150
0 2 4 6 8 10
IF(AV) / A
Fig.4. Maximum forward dissipation PF = f(IF(AV));
sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
September 1998
2
Rev 1.300





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