Document
Philips Semiconductors
Product specification
Rectifier diodes ultrafast
GENERAL DESCRIPTION
Glass passivated high efficiency dual rectifier diodes in a plastic envelope, featuring low forward voltage drop, ultra-fast recovery times and soft recovery characteristic. They are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and switching losses are essential.
BYV32 series
QUICK REFERENCE DATA
SYMBOL VRRM VF IO(AV) trr PARAMETER BYV32Repetitive peak reverse voltage Forward voltage Output current (both diodes conducting) Reverse recovery time MAX. 100 100 0.85 20 25 MAX. 150 150 0.85 20 25 MAX. 200 200 0.85 20 25 UNIT V V A ns
PINNING - TO220AB
PIN 1 2 3 tab DESCRIPTION anode 1 (a) cathode (k) anode 2 (a) cathode (k)
PIN CONFIGURATION
tab
SYMBOL
a1
a2
k
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) PARAMETER Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Output current (both diodes conducting)1 RMS forward current Repetitive peak forward current per diode Non-repetitive peak forward current per diode I2t for fusing Storage temperature Operating junction temperature square wave δ = 0.5; Tmb ≤ 115 ˚C sinusoidal a = 1.57; Tmb ≤ 118 ˚C t = 25 µs; δ = 0.5; Tmb ≤ 115 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) t = 10 ms CONDITIONS MIN. -40 -100 100 100 100 MAX. -150 150 150 150 20 18 28 20 125 137 78 150 150 -200 200 200 200 UNIT V V V A A A A A A A2s ˚C ˚C
IO(RMS) IFRM IFSM
I2t Tstg Tj
1 Neglecting switching and reverse current losses October 1994 1 Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes ultrafast
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS per diode both diodes conducting in free air MIN. -
BYV32 series
TYP. 60
MAX. 2.4 1.6 -
UNIT K/W K/W K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL VF IR PARAMETER Forward voltage (per diode) Reverse current (per diode) CONDITIONS IF = 8 A; Tj = 150˚C IF = 20 A VR = VRWM; Tj = 100 ˚C VR = VRWM MIN. TYP. 0.72 1.00 0.2 6 MAX. 0.85 1.15 0.6 30 UNIT V V mA µA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL Qs trr Irrm Vfr PARAMETER Reverse recovery charge (per diode) Reverse recovery time (per diode) Peak reverse recovery current (per diode) Forward recovery voltage (per diode) CONDITIONS IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs IF = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/µs IF = 1 A; VR ≥ 30 V; -dIF/dt = 50 A/µs; Tj = 100 ˚C IF = 1 A; dIF/dt = 10 A/µs MIN. TYP. 8 20 1.5 1 MAX. 12.5 25 2 UNIT nC ns A V
October 1994
2
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes ultrafast
BYV32 series
I
dI F dt
F
10
PF / W
Vo = 0.7 V Rs = 0.0183 Ohms
BYV32 1.9 2.2
Tmb(max) / C a = 1.57
126
8
t
2.8 4
130.8
rr
6
time
4
135.6
140.4
Q I R I
s
10%
100%
2 145.2
rrm
0
0
2
4 6 IF(AV) / A
8
150 10
Fig.1. Definition of trr, Qs and Irrm
Fig.4. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV).
trr / ns 1000
I
F
100
IF=10A
time
IF=1A
V
F V V F time
10
fr
1 1 10 dIF/dt (A/us) 100
Fig.2. Definition of Vfr
Fig.5. Maximum trr at Tj = 25 ˚C; per diode
15
PF / W
Vo = 0.7 V Rs = 0.0183 Ohms
BYV32
Tmb(max) / C 114 D = 1.0
trr / ns 1000
10 0.2 0.1 5
I
0.5
126
100
IF=10A IF=1A Tj = 100 C
tp
D=
tp T t
138
10
T
0
0
5
IF(AV) / A
10
150 15
1
1
10
dIF/dt (A/us)
100
Fig.3. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x √D.
Fig.6. Maximum trr at Tj = 100 ˚C; per diode
October 1994
3
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes ultrafast
BYV32 series
10
Irrm / A
30
IF / A Tj=150 C Tj=25 C
IF=10A 1 IF=1A
20
0.1
10
typ max
0.01 1 10 -dIF/dt (A/us) 100
0 0
0.5
VF / V
1
1.5
Fig.7. Maximum Irrm at Tj = 25 ˚C; per diode
Fig.9. Typical and maximum forward characteristic IF = f(VF); parameter Tj
10
IF / A
100 Qs / nC
IF=10A 1 IF=1A
IF=10A 5A 2A 1A 10
0.1
Tj = 100 C 0.01 1 10 -dIF/dt (A/us) 100
1.0
1.0
10 -dIF/dt (A/us)
100
Fig.8. Maximum Irrm at Tj = 100 ˚C; per diode
Fig.10. Maximum Qs at Tj = 25 ˚C; per diode
Zth (K/W) 10
1
0.1
P D
tp
t
0.01 10 us
1 ms tp / s
0.1 s
10 s
Fig.11. Transient thermal impedance; per diode; Zth j-mb = f(tp).
October 1994
4
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes ultrafast
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
BYV32 series
4,5 max 10,3 max
1,3
3,7 2,8
5,9 min
15,8 max
3,0 max not tinned
3,0
13,5 min
1,3 max 1 2 3 (2x)
2,54 2,54
0,9 max (3x)
0,6 2,4
Fig.12. TO220AB; pin 2 connected to mounting base.
Notes 1. Accessories supplied on request: refer to mounting instructions for T.