BYV32E

Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES Low forward volt drop Fast switching Soft recovery characteristic Reverse surge capability High thermal cycling performance Low thermal resistance BYV32E, BYV32EB series SYMBOL QUICK REFERENCE DATA VR = 150 V/ 200 V VF ≤ 0.85 V IO(AV) = 20 A IRRM = 0.2 A trr ≤ 25 ns a1 1 k 2 a2 3 GENERAL DESCRIPTION Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYV32E series is supplied in the SOT78 conventional leaded package. The BYV32EB series is supplied in the SOT404 surface mounting package. PINNING PIN 1 2 3 tab DESCRIPTION anode 1 (a) cathode (k) 1 anode 2 (a) cathode (k) SOT78 (TO220AB) tab SOT404 tab 2 1 23 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IFRM IFSM PARAMETER Peaqk repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode square wave; δ = 0.5; Tmb ≤ 115 ˚C t = 25 µs; δ = 0.5; Tmb ≤ 115 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) Repetitive peak reverse current tp = 2 µs; δ = 0.001 per diode Non-repetitive peak reverse tp = 100 µs current per diode Storage temperature Operating junction temperature CONDITIONS B...