BYV32E-200

BYV32E-200 Dual rugged ultrafast rectifier diode, 20 A, 200 V Rev. 04 — 27 February 2009 Product data sheet 1. Product profile 1.1 General description Ultrafast dual epitaxial rectifier diode in a SOT78 (TO-220AB) plastic package. 1.2 Features and benefits „ High reverse voltage surge capability „ High thermal cycling performance „ Low thermal resistance „ Soft recovery characteristic minimizes power consuming oscillations „ Very low on-state loss 1.3 Applications „ Output rectifiers in high-frequency switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter VRRM repetitive peak reverse voltage IO(AV) average output current IRRM repetitive peak reverse current VESD electrostatic discharge voltage Dynamic characteristics trr reverse recovery time Static characteristics VF forward voltage Conditions square-wave pulse; δ = 0.5; Tmb ≤ 115 °C; both diodes conducting; see Figure 1; see Figure 2 tp = 2 µs; δ = 0.001 HBM; C = 250 pF; R = 1.5 kΩ; all pins IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; Tj = 25 °C; ramp recovery; see Figure 5 IR = 1 A; IF = 0.5 A; Tj = 25 °C; step recovery; measured at reverse current = 0.25 A; see Figure 6 IF = 8 A; Tj = 150 °C; see Figure 4 Min Typ Max Unit - - 200 V - - 20 A - - 0.2 A - - 8 kV - 20 25 ns - 10 20 ns - 0.72 0.85 V NXP Semiconductors 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 A1 anode 1 2K cathode 3 A2 anode 2 mb K mounting base; cathode ...