DatasheetsPDF.com

BYV38 Dataheets PDF



Part Number BYV38
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description Fast Avalanche Sinterglass Diode
Datasheet BYV38 DatasheetBYV38 Datasheet (PDF)

www.vishay.com BYV37, BYV38 Vishay Semiconductors Fast Avalanche Sinterglass Diode 949539 MECHANICAL DATA Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPL.

  BYV38   BYV38


Document
www.vishay.com BYV37, BYV38 Vishay Semiconductors Fast Avalanche Sinterglass Diode 949539 MECHANICAL DATA Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Fast “soft recovery” rectification diode      ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS BYV38 BYV38-TR 5000 per 10" tape and reel BYV38 BYV38-TAP 5000 per ammopack MINIMUM ORDER QUANTITY 25 000 25 000 PARTS TABLE PART BYV37 BYV38 TYPE DIFFERENTIATION VR = 800 V; IF(AV) = 2 A VR = 1000 V; IF(AV) = 2 A PACKAGE SOD-57 SOD-57 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL Reverse voltage See electrical characteristics BYV37 BYV38 VR = VRRM VR = VRRM Peak forward surge current tp = 10 ms, half sine wave IFSM Average forward current IF(AV) Non repetitive reverse avalanche energy I(BR)R = 0.4 A ER Junction and storage temperature range Tj = Tstg VALUE 800 1000 50 2 10 - 55 to + 175 UNIT V V A A mJ °C MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Junction ambient Lead length l = 10 mm, TL = constant On PC board with spacing 25 mm RthJA RthJA VALUE 45 100 UNIT K/W K/W Rev. 1.8, 04-Sep-12 1 Document Number: 86045 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com BYV37, BYV38 Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. Forward voltage Reverse current Reverse recovery time Diode capacitance IF = 1 A VR = VRRM VR = VRRM, Tj = 150 °C IF = 0.5 A, IR = 1 A, iR = 0.25 A VR = 4 V, f = 1 MHz VF IR IR trr CD - TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) TYP. 1 15 MAX. 1.1 5 150 300 - UNIT V μA μA ns pF RthJA - Ther. Resist. Junction/Ambient (K/W) 120 100 80 60 ll 40 20 0 0 949552 TL = constant 5 10 15 20 25 l - Lead Length (mm) 30 Fig. 1 - Max. Thermal Resistance vs. Lead Length PR - Reverse Power Dissipation (mW) 500 450 VR = VRRM 400 350 300 RthJA = 45 K/W 250 100 K/W 200 160 K/W 150 100 50 0 25 15774 BYV38 BYV37 50 75 100 125 150 Tj - Junction Temperature (°C) 175 Fig. 2 - Max. Reverse Power Dissipation vs. Junction Temperature 1000 VR = VRRM 100 IR - Reverse Current (A) 10 1 25 15775 50 75 100 125 150 Tj - Junction Temperature (°C) 175 Fig. 3 - Max. Reverse Current vs. Junction Temperature IF - Forward Current (A) 10 1 Tj = 175 °C Tj = 25 °C 0.1 0.01 0.001 0 0.4 0.8 1.2 1.6 2.0 16343 VF - Forward Voltage (V) Fig. 4 - Forward Current vs. Forward Voltage Rev. 1.8, 04-Sep-12 2 Document Number: 86045 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CD - Diode Capacitance (pF) 0.82 (0.032) max. www.vishay.com BYV37, BYV38 Vishay Semiconductors IFAV - Average Forward Current (A) 2.5 VR = VRRM half sinewave 2.0 RthJA ≤ 45 K/W 1.5 I = 10 mm 1.0 0.5 RthJA ≤ 100 K/W PCB: d = 25 mm 0 0 16344 20 40 60 80 100 120 140 160 180 Tamb - Ambient Temperature (°C) Fig. 5 - Max. Average Forward Current vs. Ambient Temperature PACKAGE DIMENSIONS in millimeters (inches): SOD-57 35 f = 1 MHz 30 25 20 15 10 5 0 0.1 15776 1 10 VR - Reverse Voltage (V) 100 Fig. 6 - Typ. Diode Capacitance vs. Reverse Voltage 3.6 (0.142) max. 20543 26 (1.024) min. 4 (0.157) max. 26 (1.024) min. Rev. 1.8, 04-Sep-12 3 Document Number: 86045 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure re.


BYV37 BYV38 BYV40E


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)