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BYV4100

NXP

Fast soft-recovery controlled avalanche rectifier

DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BYV4100 Fast soft-recovery controlled avalanche rectifi...


NXP

BYV4100

File Download Download BYV4100 Datasheet


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DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BYV4100 Fast soft-recovery controlled avalanche rectifier Product specification 1996 Oct 07 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifier FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy absorption capability Available in ammo-pack Also available with preformed leads for easy insertion. DESCRIPTION Rugged glass SOD64 package, using a high temperature alloyed construction. BYV4100 This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. 2/3 page k (Datasheet) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF(AV) PARAMETER repetitive peak reverse voltage continuous reverse voltage average forward current  , a MAM104 Fig.1 Simplified outline (SOD64) and symbol. CONDITIONS MIN. − − MAX. 100 100 4.0 V V A UNIT Ttp = 65 °C; lead length = 10 mm; averaged over any 20 ms period; see Fig.2; see also Fig.4 Tamb = 60 °C; PCB mounting (see Fig.12); averaged over any 20 ms period; see Fig.3; see also Fig.4 − − 1.9 A IFRM IFSM repetitive peak forward current non-repetitive peak forward current Ttp = 65 °C; see Fig.6 Tamb = 60 °C; see Fig.7 t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax L = 120 mH; Tj = Tj max prior to surge; inductive load swit...




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