BYV42F

Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES Low forward volt drop Fast switching Soft recovery characteristic Reverse surge capability High thermal cycling performance Isolated mounting tab BYV42F, BYV42EX series SYMBOL QUICK REFERENCE DATA VR = 150 V/ 200 V a1 1 k 2 a2 3 VF ≤ 0.9 V IO(AV) = 20 A IRRM = 0.2 A trr ≤ 28 ns GENERAL DESCRIPTION Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYV42F series is supplied in the SOT186 package. The BYV42EX series is supplied in the SOT186A package. PINNING PIN 1 2 3 tab DESCRIPTION anode 1 (a) cathode (k) anode 2 (a) isolated SOT186 case SOT186A case 1 2 3 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IFRM IFSM PARAMETER Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting)1 Repetitive peak forward current per diode Non-repetitive peak forward current per diode CONDITIONS BYV42F / BYV42EX Ths ≤ 125˚C -40 MIN. -150 150 150 150 20 30 150 160 0.2 0.2 150 150 MAX. -200 200 200 200 UNIT V V V A A A A A A ˚C ˚C IRRM IRSM Tstg Tj square wave δ = 0.5; Ths ≤ 78 ˚C t = 25 µs; δ = 0.5; Ths ≤ 78 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) Repetitive peak reverse current tp = 2 µs; δ = 0.001 per diode Non-...