BYV541V-200

® BYV54V BYV541V HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES n n n n n n SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED : Insulating voltage = 2500 VRMS Capacitance = 45 pF K2 A2 A2 K1 K1 A1 K2 A1 BYV541V-200 BYV54V-200 DESCRIPTION Dual rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged in ISOTOPTM this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. ISOTOP (Plastic) ABSOLUTE MAXIMUM RATINGS Symbol IF(RMS) IF(AV) IFSM Tstg Tj RMS forward current Average forward current δ = 0.5 Surge non repetitive forward current Storage and junction temperature range Tc=90° C Parameter Per diode Per diode Value 100 50 1000 - 40 to + 150 - 40 to + 150 Unit A A A °C °C tp=10ms Per diode sinusoidal Symbol VRRM Parameter Repetitive peak reverse voltage BYV54V / BYV541V 200 Unit V ISOTOP is a trademark of STMicroelectronics. May 2000 - Ed : 2E 1/5 BYV54V / BYV541V THERMAL RESISTANCE Symbol Rth (j-c) Junction to case Parameter Per diode Total Rth (c) Coupling Value 1.2 0.85 0.1 °C/W Unit °C/W When the diodes 1 and 2 are used simultaneously : Tj-Tc (diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) ELECTRICAL CHARACTERISTICS (Per diode) STATIC CHARACTERISTICS Symbol IR * Tj = 25°C Tj = 100° C VF ** Tj = 125° C Tj = 125° C Tj = 25°C I...