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BYV72EW-150 Dataheets PDF



Part Number BYV72EW-150
Manufacturers NXP
Logo NXP
Description Rectifier diodes ultrafast/ rugged
Datasheet BYV72EW-150 DatasheetBYV72EW-150 Datasheet (PDF)

Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES • Low forward volt drop • Fast switching • Soft recovery characteristic • Reverse surge capability • High thermal cycling performance • Low thermal resistance BYV72EW series SYMBOL QUICK REFERENCE DATA VR = 150 V/ 200 V VF ≤ 0.85 V IO(AV) = 30 A IRRM = 0.2 A trr ≤ 28 ns a1 1 k 2 a2 3 GENERAL DESCRIPTION Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequen.

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Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES • Low forward volt drop • Fast switching • Soft recovery characteristic • Reverse surge capability • High thermal cycling performance • Low thermal resistance BYV72EW series SYMBOL QUICK REFERENCE DATA VR = 150 V/ 200 V VF ≤ 0.85 V IO(AV) = 30 A IRRM = 0.2 A trr ≤ 28 ns a1 1 k 2 a2 3 GENERAL DESCRIPTION Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYV72EW series is supplied in the conventional leaded SOT429 (TO247) package. PINNING PIN 1 2 3 tab DESCRIPTION anode 1 cathode anode 2 cathode SOT429 (TO247) 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IFRM IFSM PARAMETER Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting)1 Repetitive peak forward current per diode Non-repetitive peak forward current per diode CONDITIONS BYV72EW Tmb ≤ 144˚C -40 MIN. -150 150 150 150 30 30 150 160 0.2 0.2 150 150 MAX. -200 200 200 200 UNIT V V V A A A A A A ˚C ˚C IRRM IRSM Tstg Tj square wave δ = 0.5; Tmb ≤ 104 ˚C t = 25 µs; δ = 0.5; Tmb ≤ 104 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) Repetitive peak reverse current tp = 2 µs; δ = 0.001 per diode Non-repetitive peak reverse tp = 100 µs current per diode Storage temperature Operating junction temperature 1 Neglecting switching and reverse current losses. ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model; C = 250 pF; R = 1.5 kΩ MIN. MAX. 8 UNIT kV October 1998 1 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS per diode both diodes conducting in free air MIN. - BYV72EW series TYP. 45 MAX. 2.4 1.4 - UNIT K/W K/W K/W ELECTRICAL CHARACTERISTICS characteristics are per diode at Tj = 25 ˚C unless otherwise stated SYMBOL VF IR Qs trr1 trr2 Vfr PARAMETER Forward voltage Reverse current Reverse recovery charge Reverse recovery time Reverse recovery time Forward recovery voltage CONDITIONS IF = 15 A; Tj = 150˚C IF = 15 A IF = 30 A VR = VRWM; Tj = 100 ˚C VR = VRWM IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs IF = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/µs IF = 0.5 A to IR = 1 A; Irec = 0.25 A IF = 1 A; dIF/dt = 10 A/µs MIN. TYP. 0.83 0.95 1.00 0.5 10 6 20 13 1 MAX. 0.90 1.05 1.20 1 100 15 28 22 UNIT V V V mA µA nC ns ns V October 1998 2 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYV72EW series I dI F dt F 0.5A IF t rr time 0A I rec = 0.25A IR trr2 Q I R I s 10% 100% rrm I = 1A R Fig.1. Definition of trr1, Qs and Irrm Fig.4. Definition of trr2 I F 20 PF / W Vo = 0.705 V Rs = 0.0097 Ohms BYV42 Tmb(max) / C 102 D = 1.0 0.5 15 114 time VF 10 0.1 0.2 126 5 I tp D= tp T t 138 V VF time fr T 0 0 5 10 15 IF(AV) / A 20 150 25 Fig.2. Definition of Vfr Fig.5. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x √D. PF / W Vo = 0.705 V Rs = 0.0097 Ohms R 15 BYV42 Tmb(max) / C 114 a = 1.57 1.9 2.2 D.U.T. Voltage Pulse Source 10 4 2.8 126 Current shunt 5 138 to ’scope 0 150 15 0 5 IF(AV) / A 10 Fig.3. Circuit schematic for trr2 Fig.6. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). October 1998 3 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYV72EW series trr / ns 1000 100 Qs / nC IF=20A 10A 5A 2A 1A 10 IF=20A 100 IF=1A 10 1 1 10 dIF/dt (A/us) 100 1.0 1.0 10 -dIF/dt (A/us) 100 Fig.7. Maximum trr at Tj = 25 ˚C; per diode Fig.10. Maximum Qs at Tj = 25 ˚C; per diode 10 Irrm / A 10 Transient thermal impedance, Zth j-mb (K/W) IF=20A 1 1 IF=1A 0.1 0.1 0.01 P D tp D= tp T t 0.01 1 10 -dIF/dt (A/us) 100 0.001 1us T 10us 100us 1ms 10ms 100ms 1s pulse width, tp (s) BYV42E 10s Fig.8. Maximum Irrm at Tj = 25 ˚C; per diode Fig.11. Transient thermal impedance; per diode; Zth j-mb = f(tp). 50 IF / A Tj = 150 C 40 Tj = 25 C 30 20 typ 10 max 0 0 0.5 VF / V 1.0 1.5 Fig.9. Typical and maximum forward characteristic IF = f(VF); parameter Tj October 1998 4 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged MECHANICAL DATA Dimensions in mm Net Mass: 5 g 5.3 3.5 21 max 15.5 max seating plane 7.3 16 max 5.3 max 1.8 o 3.5 max BYV72EW series 2.5 4.0 max 1 2.2 max 3.2 max 5.45 2 3 0.9 max 1.1 5.45 0.4 M 15.5 min Fig.12. SOT429 (TO247); pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT429 envelope. 2. Epoxy me.


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