Document
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
FEATURES
• Low forward volt drop • Fast switching • Soft recovery characteristic • Reverse surge capability • High thermal cycling performance • Low thermal resistance
BYV72EW series
SYMBOL
QUICK REFERENCE DATA
VR = 150 V/ 200 V VF ≤ 0.85 V IO(AV) = 30 A IRRM = 0.2 A trr ≤ 28 ns
a1 1 k 2
a2 3
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYV72EW series is supplied in the conventional leaded SOT429 (TO247) package.
PINNING
PIN 1 2 3 tab DESCRIPTION anode 1 cathode anode 2 cathode
SOT429 (TO247)
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IFRM IFSM PARAMETER Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting)1 Repetitive peak forward current per diode Non-repetitive peak forward current per diode CONDITIONS BYV72EW Tmb ≤ 144˚C -40 MIN. -150 150 150 150 30 30 150 160 0.2 0.2 150 150 MAX. -200 200 200 200 UNIT V V V A A A A A A ˚C ˚C
IRRM IRSM Tstg Tj
square wave δ = 0.5; Tmb ≤ 104 ˚C t = 25 µs; δ = 0.5; Tmb ≤ 104 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) Repetitive peak reverse current tp = 2 µs; δ = 0.001 per diode Non-repetitive peak reverse tp = 100 µs current per diode Storage temperature Operating junction temperature
1 Neglecting switching and reverse current losses.
ESD LIMITING VALUE
SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model; C = 250 pF; R = 1.5 kΩ MIN. MAX. 8 UNIT kV
October 1998
1
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS per diode both diodes conducting in free air MIN. -
BYV72EW series
TYP. 45
MAX. 2.4 1.4 -
UNIT K/W K/W K/W
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 ˚C unless otherwise stated SYMBOL VF IR Qs trr1 trr2 Vfr PARAMETER Forward voltage Reverse current Reverse recovery charge Reverse recovery time Reverse recovery time Forward recovery voltage CONDITIONS IF = 15 A; Tj = 150˚C IF = 15 A IF = 30 A VR = VRWM; Tj = 100 ˚C VR = VRWM IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs IF = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/µs IF = 0.5 A to IR = 1 A; Irec = 0.25 A IF = 1 A; dIF/dt = 10 A/µs MIN. TYP. 0.83 0.95 1.00 0.5 10 6 20 13 1 MAX. 0.90 1.05 1.20 1 100 15 28 22 UNIT V V V mA µA nC ns ns V
October 1998
2
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
BYV72EW series
I
dI F dt
F
0.5A IF
t
rr time
0A I rec = 0.25A IR trr2
Q I R I
s
10%
100%
rrm
I = 1A R
Fig.1. Definition of trr1, Qs and Irrm
Fig.4. Definition of trr2
I
F
20
PF / W
Vo = 0.705 V Rs = 0.0097 Ohms
BYV42
Tmb(max) / C 102 D = 1.0 0.5
15
114
time VF
10
0.1
0.2 126
5
I
tp
D=
tp T t
138
V VF time
fr
T
0
0
5
10 15 IF(AV) / A
20
150 25
Fig.2. Definition of Vfr
Fig.5. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x √D.
PF / W
Vo = 0.705 V Rs = 0.0097 Ohms
R
15
BYV42
Tmb(max) / C 114 a = 1.57 1.9 2.2
D.U.T. Voltage Pulse Source
10 4
2.8
126
Current shunt
5
138
to ’scope
0 150 15
0
5
IF(AV) / A
10
Fig.3. Circuit schematic for trr2
Fig.6. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV).
October 1998
3
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
BYV72EW series
trr / ns 1000
100 Qs / nC IF=20A 10A 5A 2A 1A 10
IF=20A 100 IF=1A 10
1
1
10 dIF/dt (A/us)
100
1.0
1.0
10 -dIF/dt (A/us)
100
Fig.7. Maximum trr at Tj = 25 ˚C; per diode
Fig.10. Maximum Qs at Tj = 25 ˚C; per diode
10
Irrm / A
10
Transient thermal impedance, Zth j-mb (K/W)
IF=20A
1
1 IF=1A
0.1
0.1
0.01
P D tp D=
tp T t
0.01 1 10 -dIF/dt (A/us) 100
0.001 1us
T
10us
100us 1ms 10ms 100ms 1s pulse width, tp (s) BYV42E
10s
Fig.8. Maximum Irrm at Tj = 25 ˚C; per diode
Fig.11. Transient thermal impedance; per diode; Zth j-mb = f(tp).
50
IF / A Tj = 150 C
40
Tj = 25 C
30
20 typ 10 max 0 0 0.5 VF / V 1.0 1.5
Fig.9. Typical and maximum forward characteristic IF = f(VF); parameter Tj
October 1998
4
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
MECHANICAL DATA
Dimensions in mm Net Mass: 5 g
5.3 3.5 21 max 15.5 max seating plane 7.3 16 max 5.3 max 1.8 o 3.5 max
BYV72EW series
2.5 4.0 max 1 2.2 max 3.2 max 5.45 2 3 0.9 max 1.1 5.45 0.4 M
15.5 min
Fig.12. SOT429 (TO247); pin 2 connected to mounting base.
Notes 1. Refer to mounting instructions for SOT429 envelope. 2. Epoxy me.