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BYV95

NXP

Fast soft-recovery controlled avalanche rectifiers

DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BYV95 series Fast soft-recovery controlled avalanche re...


NXP

BYV95

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DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BYV95 series Fast soft-recovery controlled avalanche rectifiers Product specification Supersedes data of April 1982 1996 Jun 07 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy absorption capability Available in ammo-pack. DESCRIPTION Rugged glass SOD57 package, using a high temperature alloyed construction. This package is BYV95 series hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. 2/3 page k (Datasheet) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYV95A BYV95B BYV95C VR continuous reverse voltage BYV95A BYV95B BYV95C IF(AV) average forward current PARAMETER repetitive peak reverse voltage  a MAM047 Fig.1 Simplified outline (SOD57) and symbol. CONDITIONS MIN. − − − − − − MAX. 200 400 600 200 400 600 1.5 V V V V V V A UNIT Ttp = 65 °C; lead length = 10 mm see Fig. 2; averaged over any 20 ms period; see also Fig. 6 Tamb = 65 °C; PCB mounting (see Fig.11); see Fig. 3; averaged over any 20 ms period; see also Fig. 6 − − 0.8 A IFRM IFSM repetitive peak forward current non-repetitive peak forward current Ttp = 65 °C; see Fig. 4 Tamb = 65 °C; see Fig. 5 t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMm...




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