Document
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
BYV96 series Fast soft-recovery controlled avalanche rectifiers
Product specification Supersedes data of April 1982 1996 Jun 07
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers
FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • Available in ammo-pack. DESCRIPTION
BYV96 series
Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
2/3 page k (Datasheet)
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYV96D BYV96E VR continuous reverse voltage BYV96D BYV96E IF(AV) average forward current PARAMETER repetitive peak reverse voltage
a
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
CONDITIONS
MIN. − − − −
MAX. 800 1000 800 1000 1.5 V V V V A
UNIT
Ttp = 55 °C; lead length = 10 mm see Fig 2; averaged over any 20 ms period; see also Fig 6 Tamb = 55 °C; PCB mounting (see Fig.11); see Fig 3; averaged over any 20 ms period; see also Fig 6
−
−
0.8
A
IFRM IFSM
repetitive peak forward current non-repetitive peak forward current
Ttp = 55 °C; see Fig 4 Tamb = 55 °C; see Fig 5 t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax L = 120 mH; Tj = Tj max prior to surge; inductive load switched off see Fig 7
− − −
17 9 35
A A A
ERSM Tstg Tj
non-repetitive peak reverse avalanche energy storage temperature junction temperature
− −65 −65
10 +175 +175
mJ °C °C
1996 Jun 07
2
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers
ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF V(BR)R PARAMETER forward voltage reverse avalanche breakdown voltage BYV96D BYV96E IR reverse current VR = VRRMmax; see Fig 9 VR = VRRMmax; Tj = 165 °C; see Fig 9 trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig 12 f = 1 MHz; VR = 0 V; see Fig 10 when switched from IF = 1 A to VR ≥ 30 V and dIF/dt = −1 A/µs; see Fig.13 CONDITIONS IF = 3 A; Tj = Tj max; see Fig 8 IF = 3 A; see Fig 8 IR = 0.1 mA 900 1100 − − − − − − − − MIN. − − TYP. − −
BYV96 series
MAX. 1.35 1.60 V V
UNIT
− − 1 150 300
V V µA µA ns
Cd dI R -------dt
diode capacitance maximum slope of reverse recovery current
− −
40 −
− 6
pF A/µs
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11. For more information please refer to the “General Part of associated Handbook”. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS lead length = 10 mm note 1 VALUE 46 100 UNIT K/W K/W
1996 Jun 07
3
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers
GRAPHICAL DATA
MGC588
BYV96 series
MGC587
handbook, halfpage
2.0
IF(AV) (A) 1.6
handbook, halfpage
1.2
lead length 10 mm
IF(AV) (A) 0.8
1.2
0.8 0.4 0.4
0 0 100 Ttp ( o C) 200
0 0 100 Tamb ( oC) 200
a = 1.57; VR = VRRMmax; δ = 0.5.
a = 1.57; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.11.
Fig.2
Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage).
Fig.3
Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage).
MGC585
handbook, full pagewidth
20
IFRM (A) 16
δ= 0.05
12 0.1
8 0.2
4
0.5 1
0 10 2
10 1
1
10
10 2
10 3
tp (ms)
10 4
Ttp = 55°C; Rth j-tp = 46 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V.
Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Jun 07
4
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers
BYV96 series
MGC586
handbook, full pagewidth
10
IFRM (A) 8
δ= 0.05
6
0.1
4
0.2
2
0.5 1
0 10 2
10 1
1
10
10 2
10 3
tp (ms)
10 4
Tamb = 55 °C; Rth j-a = 100 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V.
Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MGC576
MGC583
handbook, halfpage
3
handbook, halfpage
200
P (W)
a = 3 2.5
2
1.57 1.42
Tj o ( C)
2
100
1 D E
0 0 1 IF(AV) (A) 2
0 0 500 VR (V) 1000
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Solid line = VR.
Fig.6
Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current.
Dotted line = VRRM; δ = 0.5.
Fig.7
Maximum permissible junction temperature as a function of reverse voltage.
1996 Jun 07
5
Philip.