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BYV96D

EIC discrete Semiconductors

AVALANCHE FAST RECOVERY RECTIFIER DIODES

BYV95A - BYV96E PRV : 200 - 1000 Volts Io : 1.5 Amperes FEATURES : * High current capability * High surge current capabi...


EIC discrete Semiconductors

BYV96D

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BYV95A - BYV96E PRV : 200 - 1000 Volts Io : 1.5 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Fast switching for high efficiency AVALANCHE FAST RECOVERY RECTIFIER DIODES D2 0.161 (4.10) 0.154 (3.90) 1.00 (25.4) MIN. 0.284 (7.21) 0.268 (6.81) MECHANICAL DATA : * Case : D2 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.465 gram Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 50 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS voltage Maximum DC Blocking Voltage Min. Avalanche Breakdown Voltage @ 100 µA Maximum Average Forward Rectified Current Lead Length 10 mm. ; Ttp = 65 °C Peak Forward Surge Current single half sine wave superimposed on rated load Maximum Forward Voltage at IF = 3.0 Amps. Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Thermal Resistance (Note 2) Junction Temperature Range Storage Temperature Range Notes : TJ = 25 °C TJ = 165 °C SYMBOL BYV95A BYV95B BYV95C BYV96D BYV96E UNITS VRRM VRMS VDC VBR(min. ) I F(AV) IFSM VF IR Trr...




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