Document
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
BYV97 series Fast soft-recovery controlled avalanche rectifiers
Product specification Supersedes data of February 1994 1996 Jun 07
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers
FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • Available in ammo-pack. DESCRIPTION
BYV97 series
Rugged glass SOD57 package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
2/3 page k (Datasheet)
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYV97F BYV97G VR continuous reverse voltage BYV97F BYV97G IF(AV) average forward current PARAMETER repetitive peak reverse voltage
a
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
CONDITIONS
MIN. − − − −
MAX. 1200 1400 1200 1400 1.6 V V V V A
UNIT
Ttp = 60 °C; lead length = 10 mm see Fig.2; averaged over any 20 ms period; see also Fig.6 Tamb = 50 °C; PCB mounting (see Fig. 12); see Fig.3; averaged over any 20 ms period; see also Fig.6 Ttp = 65 °C; see Fig.4 Tamb = 65 °C; see Fig.5 t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax L = 120 mH; Tj = Tj max prior to surge; inductive load switched off see Fig.7
−
IF(AV)
average forward current
−
0.9
A
IFRM IFSM
repetitive peak forward current non-repetitive peak forward current
− − −
15 8 20
A A A
ERSM Tstg Tj
non-repetitive peak reverse avalanche energy storage temperature junction temperature
− −65 −65
10 +175 +175
mJ °C °C
1996 Jun 07
2
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers
ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF V(BR)R PARAMETER forward voltage reverse avalanche breakdown voltage BYV97F BYV97G IR reverse current VR = VRRMmax; see Fig.9 VR = VRRMmax; Tj = 165 °C; see Fig.9 trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.14 f = 1 MHz; VR = 0 V; see Fig.11 when switched from IF = 1 A to VR ≥ 30 V and dIF/dt = −1 A/µs; see Figs 10 and 13 CONDITIONS IF = 3 A; Tj = Tj max; see Fig.8 IF = 3 A; see Fig.8 IR = 0.1 mA 1300 1500 − − − − − − − − − − MIN. TYP.
BYV97 series
MAX. 1.35 1.65 V V
UNIT
− − 1 150 500
V V µA µA ns
Cd dI R -------dt
diode capacitance maximum slope of reverse recovery current
− −
35 −
− 5
pF A/µs
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig. 12. For more information please refer to the “General Part of associated Handbook”. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS lead length = 10 mm note 1 VALUE 46 100 UNIT K/W K/W
1996 Jun 07
3
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers
GRAPHICAL DATA
MBD419
BYV97 series
handbook, halfpage
2.0
I F(AV) (A) 1.6
handbook, halfpage
1.2
MBD420
I F(AV) (A) lead length 10 mm 0.8
1.2
0.8 0.4 0.4
0 0 100 Ttp ( C)
o
0 200 0 100 T amb ( oC) 200
a = 1.57; VR = VRRMmax; δ = 0.5.
a = 1.57; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.12.
Fig.2
Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage).
Fig.3
Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage).
16 I FRM (A) 12 δ = 0.05
MBD448
0.1 8 0.2
4
0.5
1 0 10 2
10 1
1
10
10 2
10 3
t p (ms)
10 4
Ttp = 65°C; Rth j-tp = 46 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V.
Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Jun 07
4
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers
BYV97 series
10 I FRM (A) 8 δ = 0.05
MBD442
6 0.1 4 0.2
2
0.5 1
0 10 2
10 1
1
10
10 2
10 3
t p (ms)
10 4
Tamb = 65 °C; Rth j-a = 100 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V.
Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, halfpage
3
MBD428
handbook, halfpage
200
MBD433
P (W) 2
a=3
2.5
2
1.57 1.42 Tj ( oC)
100
1 BYV97F BYV97G
0 0 1 I F(AV) (A) 2
0
0
1000
VR (V)
2000
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Solid line = VR. Dotted line = VRRM; δ = 0.5.
Fig.6
Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current.
Fig.7
Maximum permissible junction temperature as a function of reverse voltage.
1996 Jun 07
5
.