BYW28

DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D333 BYW28 series Ultra fast low-loss controlled avalanche rectifier Product specification File under Discrete Semiconductors, SC01 1997 Nov 26 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy absorption capability. handbook, halfpage BYW28 series The package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. DESCRIPTION Rugged glass SOD115 package, using a high temperature alloyed construction. k a MAM384 Fig.1 Simplified outline (SOD115) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM PARAMETER repetitive peak reverse voltage BYW28-500 BYW28-600 VR continuous reverse voltage BYW28-500 BYW28-600 IF(AV) average forward current Ttp = 85 °C; lead length = 10 mm; see Fig.2; averaged over any 20 ms period; see also Fig.6 Tamb = 60 °C; printed-circuit board mounting (see Fig.11); see Fig.3; averaged over any 20 ms period; see also Fig.6 IFRM IFSM repetitive peak forward current non-repetitive peak forward current Ttp = 85 °C; see Fig.4 Tamb = 60 °C; see Fig.5 t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax L = 120 mH; Tj = Tj max prior to surge; inductive load switched off see Fig.7 − − − 500 600 4 V V A − − 5...