BYX132GL

DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX132GL High-voltage car ignition diode Product specification 2000 Jan 13 Philips Semiconductors Product specification High-voltage car ignition diode FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy absorption capability. APPLICATIONS Car ignition systems Automotive applications with extreme temperature requirements. handbook, k halfpage BYX132GL DESCRIPTION Rugged glass package, using a high temperature alloyed construction. The SOD119AB is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package is designed to be used in an insulating medium such as resin, oil or SF6 gas. a MAM420 Cathode indicated by a red band. Fig.1 Simplified outline (SOD119AB) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VRWM IF(AV) IRSM Tstg Tj PARAMETER repetitive peak reverse voltage crest working reverse voltage average forward current non-repetitive peak reverse current storage temperature junction temperature continuous maximum 30 minutes CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF V(BR)R IR PARAMETER forward voltage reverse avalanche breakdown voltage reverse current CONDITIONS IF = 10 mA IR = 100 µA VR = VRWMmax; Tj = 175 °C MIN. 2.5 2.6 − MAX. 3.5 3.7 30 V kV µA UNIT t = 100 µs triangular pulse; Tj max prior to surge C...