High-voltage car ignition diode
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D354
BYX133GL High-voltage car ignition diode
Product specification Supersedes da...
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D354
BYX133GL High-voltage car ignition diode
Product specification Supersedes data of 1998 Dec 04 2000 Jan 13
Philips Semiconductors
Product specification
High-voltage car ignition diode
FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy absorption capability. APPLICATIONS Car ignition systems Automotive applications with extreme temperature requirements.
handbook, k halfpage
BYX133GL
DESCRIPTION Rugged glass package, using a high temperature alloyed construction. The SOD119AB is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package is designed to be used in an insulating medium such as resin, oil or SF6 gas.
a
MAM420
Cathode indicated by a brown band.
Fig.1 Simplified outline (SOD119AB) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VRWM IF(AV) IRSM Tstg Tj PARAMETER repetitive peak reverse voltage crest working reverse voltage average forward current non-repetitive peak reverse current storage temperature junction temperature continuous maximum 30 minutes CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF V(BR)R IR PARAMETER forward voltage reverse avalanche breakdown voltage reverse current CONDITIONS IF = 10 mA IR = 100 µA VR = VRWMmax; Tj = 175 °C MIN. 3.75 3.5 − MAX. 5.25 5.5 30 V kV µA UNIT t = 100 µs triangu...
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