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BYZ50A33

Diotec Semiconductor

Silicon Protectifiers

BYZ 50A22 ... BYZ 50A47 BYZ 50K22 ... BYZ 50K47 Silicon Protectifiers with TVS characteristics High-temperature diodes S...


Diotec Semiconductor

BYZ50A33

File Download Download BYZ50A33 Datasheet


Description
BYZ 50A22 ... BYZ 50A47 BYZ 50K22 ... BYZ 50K47 Silicon Protectifiers with TVS characteristics High-temperature diodes Silizium Schutzgleichrichter mit Begrenzereigenschaften Hochtemperaturdioden Ø 12.75 Ø 11 ±0.1 Nominal current – Nennstrom Nominal breakdown voltage Nominale Abbruch-Spannung Rändel 0.8 knurl 0.8 50 A 19.8 ... 51.7 V 28.5 ±0.5 1.3 Metal press-fit case with plastic cover Metall-Einpreßgehäuse mit Plastik-Abdeckung Weight approx. – Gewicht ca. Casting compound has UL classification 94V-0 Vergußmasse UL94V-0 klassifiziert Standard packaging: bulk Standard Lieferform: lose im Karton 10 g Ø 13 ±01 Dimensions / Maße in mm Maximum ratings Type / Typ Wire to / Draht an Anode BYZ 50A22 BYZ 50A27 BYZ 50A33 BYZ 50A39 BYZ 50A47 Cathode BYZ 50K22 BYZ 50K27 BYZ 50K33 BYZ 50K39 BYZ 50K47 Breakdown voltage Abbruch-Spannung IT = 100 mA VBRmin [V] VBRmax 19.8 24.3 29.7 35.1 42.3 24.2 29.7 36.3 42.9 51.7 Reverse voltage Sperrspannung IR = 5 :A VR [V] > 17.8 > 21.8 > 26.8 > 31.6 > 38.1 5 ±0.2 10.7 ±0.2 Grenzwerte Max. clamping voltage Max. Begrenzerspanng. at / bei IPP, tp = 1m s VC [V] IPP [A] 31,9 39,1 47,7 56,4 67,8 242 192 160 134 112 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last Peak forward surge current, 50 / 60 Hz half sine-wave Stoßstrom für eine 50 / 60 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t <10 ms Forward voltage – Durchlaßspannung Tj = 25/C TC = 150/C TA = 25/C TA = 25/C IF = 50 A IFA...




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