BZA109TS

DISCRETE SEMICONDUCTORS DATA SHEET M3D370 BZA109TS 9-fold ESD Transient Suppressor Preliminary specification File under Discrete Semiconductors, SC01 1997 Sep 08 Philips Semiconductors Preliminary specification 9-fold ESD Transient Suppressor FEATURES ESD rating > 8 kV, according to IEC1000-4-2 SOT339 surface mount package Common anode configuration Non-clamping range 0 - 6.8 V, negative clamping range <0.5 V, positive clamping range >6.8 V. APPLICATIONS Computer and peripherals Audio and video equipment Communication systems Medical equipment. PINNING SOT339-1 DESCRIPTION BZA109TS Monolithic silicon zener diode in a SOT339-1 package (SO20) for 9 bit wide undershoot/overshoot clamping, combined with fast ESD transient suppression. book, halfpage 20 11 1 Top view 10 MBK198 Fig.1 Symbol and pinning. Fig.2 Simplified outline. 1997 Sep 08 2 Philips Semiconductors Preliminary specification 9-fold ESD Transient Suppressor LIMITING VALUES (per diode) In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IZ IF IFT IFSM IZSM Ptot Tstg Tj PARAMETER reverse current forward current feed-through current peak forward current peak reverse current total power dissipation storage temperature junction temperature CONDITIONS DC; Tamb = 25 °C DC; Tamb = 25 °C DC; Tamb = 25 °C; note 1 tp = 1 ms; square wave tp = 1 ms; square wave Tamb = 25 °C; note 2 − −65 −65 MIN. − − − − BZA109TS MAX. 20 100 100 4.5 2.5 0.95 +150 +150 UNIT mA mA mA A A W °C ...