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BZG01-C120 Dataheets PDF



Part Number BZG01-C120
Manufacturers NXP
Logo NXP
Description SMA voltage regulator diodes
Datasheet BZG01-C120 DatasheetBZG01-C120 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 BZG01 series SMA voltage regulator diodes Product specification 2000 Feb 17 Philips Semiconductors Product specification SMA voltage regulator diodes FEATURES • Glass passivated • High maximum operating temperature • Ideal for surface mount automotive applications • Low leakage current • Excellent stability • UL 94V-O classified plastic package • Zener working voltage range: 10 to 270 V for 35 types • Supplied in 12 mm embossed tape an.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 BZG01 series SMA voltage regulator diodes Product specification 2000 Feb 17 Philips Semiconductors Product specification SMA voltage regulator diodes FEATURES • Glass passivated • High maximum operating temperature • Ideal for surface mount automotive applications • Low leakage current • Excellent stability • UL 94V-O classified plastic package • Zener working voltage range: 10 to 270 V for 35 types • Supplied in 12 mm embossed tape and reel, 1500 and 7500 pieces • Marking: cathode, date code, type name • Easy pick and place. Top view olumns BZG01 series DESCRIPTION DO-214AC surface mountable package with glass passivated chip. The well-defined void-free case is of a transfer-moulded thermo-setting plastic. The small rectangular package has two J bent leads. cathode band k a Side view MBL143 Fig.1 Simplified outline (DO-214AC) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Ptot PARAMETER total power dissipation CONDITIONS Ttp = 100 °C; see Fig.2 Tamb = 25 °C; see Fig.2; device mounted on an Al2O3 printed-circuit board: see Fig.5 PZSM Tstg Tj non-repetitive peak reverse power dissipation storage temperature junction temperature tp = 100 µs; square pulse; Tj = 25 °C prior to surge; see Fig.3 − − MIN. MAX. 2.50 1.50 UNIT W W − −65 −65 150 +175 +175 W °C °C 2000 Feb 17 2 Philips Semiconductors Product specification SMA voltage regulator diodes ELECTRICAL CHARACTERISTICS Total series Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS IF = 0.1 A; see Fig.4 BZG01 series MAX. 1.2 UNIT V Per type Tj = 25 °C unless otherwise specified. TYPE No. SUFFIX (1) WORKING VOLTAGE VZ (V) at IZ MIN. NOM. 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 MAX. 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9 32 35 38 41 46 50 54 60 66 72 79 87 96 106 116 127 141 156 DIFFERENTIAL RESISTANCE rdif (Ω) at IZ TYP. 2 3 3 3 5 5 7 8 8 8 10 10 12 13 17 17 30 40 40 40 40 40 70 80 120 150 200 250 300 MAX. 7 8 9 10 15 15 20 24 25 25 30 30 35 40 50 50 90 115 120 125 130 135 200 250 350 450 550 700 1000 TEMPERATURE TEST COEFFICIENT CURRENT SZ (%/K) at IZ MIN. 0.05 0.05 0.05 0.05 0.05 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.07 0.07 0.07 0.07 0.08 0.08 0.08 0.08 0.09 0.09 0.09 0.09 0.09 0.09 MAX. 0.09 0.10 0.10 0.10 0.10 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.12 0.12 0.12 0.12 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 IZ (mA) 25 20 20 20 15 15 15 10 10 10 8 8 8 8 6 6 4 4 4 4 4 4 2.7 2.7 2.7 2.7 2 2 2 REVERSE CURRENT at REVERSE VOLTAGE IR (µA) MAX. 10 4 3 2 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 VR (V) 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 C10 C11 C12 C13 C15 C16 C18 C20 C22 C24 C27 C30 C33 C36 C39 C43 C47 C51 C56 C62 C68 C75 C82 C91 C100 C110 C120 C130 C150 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28 31 34 37 40 44 48 52 58 64 70 77 85 94 104 114 124 138 2000 Feb 17 3 Philips Semiconductors Product specification SMA voltage regulator diodes BZG01 series TYPE No. SUFFIX (1) WORKING VOLTAGE VZ (V) at IZ MIN. NOM. 160 180 200 220 240 270 MAX. 171 191 212 233 256 289 DIFFERENTIAL RESISTANCE rdif (Ω) at IZ TYP. 350 400 500 700 800 1000 MAX. 1100 1200 1500 2250 2550 3000 TEMPERATURE TEST COEFFICIENT CURRENT SZ (%/K) at IZ MIN. 0.09 0.09 0.09 0.09 0.09 0.09 MAX. 0.13 0.13 0.13 0.13 0.13 0.13 IZ (mA) 1.5 1.5 1.5 1 1 1 REVERSE CURRENT at REVERSE VOLTAGE IR (µA) MAX. 1 1 1 1 1 1 VR (V) 120 130 150 160 180 200 C160 C180 C200 C220 C240 C270 Note 153 168 188 208 228 251 1. To complete the type number the suffix is added to the basic type number, e.g. BZG01-C130. THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 note 2 Notes 1. Device mounted on an Al2O3 printed-circuit board, 0.7 mm thick; thickness of Cu-layer ≥35 µm, see Fig.5. 2. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.5. For more information please refer to the ‘General Part of associated Handbook’. CONDITIONS VALUE 30 100 150 UNIT K/W K/W K/W 2000 Feb 17 4 Philips Semiconductors Product specification SMA voltage regulator diodes GRAPHICAL DATA MCD826 BZG01 series handbook, halfpage 3 103 handbook, halfpage PZSM (W) 102 MCD825 Ptot (W) 2 1 10 0 0 40 80 120 160 200 T (°C) 1 10−2 10−1 1 tp (ms) 10 Solid line: tie-point temperature. Dotted line: ambient temperature; device mounted on an Al2O3 printed-circuit board as shown in Fig.5. Tj = 25 °C prior to surge. Fig.3 Fig.2 Maximum total power dissipation as a function of temperature. Maximum non-repetitive peak reverse power dissipation as a function of pulse duration (square pulse). handbook, halfpage 3 MCD824 IF (A) 2 50 4.5.


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