DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D168
BZG03 series Voltage regulator diodes
Preliminary specifi...
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D168
BZG03 series Voltage
regulator diodes
Preliminary specification Supersedes data of October 1993 1996 Jun 07
Philips Semiconductors
Preliminary specification
Voltage
regulator diodes
FEATURES Glass passivatedb High maximum operating temperature Low leakage current Excellent stability UL 94V-O classified plastic package Zener working voltage range: 10 to 270 V for 35 types Supplied in 12 mm embossed tape. DESCRIPTION DO-214AC surface mountable package with glass passivated chip.
BZG03 series
The well-defined void-free case is of a transfer-moulded thermo-setting plastic.
handbook, 4 columns
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
,, ,, ,,
k
cathode band a
Top view
Side view
MSA473
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Ptot Ptot PZSM Tstg Tj PARAMETER total power dissipation total power dissipation non-repetitive peak reverse power dissipation storage temperature junction temperature CONDITIONS Ttp = 100 °C; see Fig.2 Tamb = 50 °C; see Fig.2; device mounted on an Al2O3 PCB (see Fig.5) tp = 100 µs; square pulse; Tj = 25 °C prior to surge; see Fig.3 MIN. − − − −65 −65 MAX. 3.00 1.25 600 +175 +175 UNIT W W W °C °C
1996 Jun 07
2
Philips Semiconductors
Preliminary specification
Voltage
regulator diodes
ELECTRICAL CHARACTERISTICS Total series Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS IF...