Document
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D168
BZG04 series Transient voltage suppressor diodes
Preliminary specification Supersedes data of 1996 Jun 10 1996 Sep 19
Philips Semiconductors
Preliminary specification
Transient voltage suppressor diodes
FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • UL 94V-O classified plastic package • Transient suppressor stand-off voltage range: 8.2 to 220 V for 32 types • Shipped in 12 mm embossed tape. DESCRIPTION DO-214AC surface mountable package with glass passivated chip.
BZG04 series
The well-defined void-free case is of a transfer-moulded thermo-setting plastic.
handbook, 4 columns
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
,, ,, ,,
k
cathode band a
Top view
Side view
MSA473
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PRSM PARAMETER non-repetitive peak reverse power dissipation storage temperature junction temperature CONDITIONS 10/1000 µs exponential pulse (see Fig.4); Tj = 25 °C prior to surge; see also Fig.2 MIN. − MAX. 300 UNIT W
Tstg Tj
−65 −65
+175 +175
°C °C
1996 Sep 19
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Philips Semiconductors
Preliminary specification
Transient voltage suppressor diodes
ELECTRICAL CHARACTERISTICS Total series Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS IF = 0.5 A; see Fig.3 MIN. −
BZG04 series
MAX. 1.2 V
UNIT
Per type Tj = 25 °C unless otherwise specified. REVERSE BREAKDOWN VOLTAGE V(BR)R (V) at Itest MIN. BZG04-8V2 BZG04-9V1 BZG04-10 BZG04-11 BZG04-12 BZG04-13 BZG04-15 BZG04-16 BZG04-18 BZG04-20 BZG04-22 BZG04-24 BZG04-27 BZG04-30 BZG04-33 BZG04-36 BZG04-39 BZG04-43 BZG04-47 BZG04-51 BZG04-56 BZG04-62 BZG04-68 BZG04-75 BZG04-82 BZG04-91 BZG04-100 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28 31 34 37 40 44 48 52 58 64 70 77 85 94 104 114 TEMPERATURE COEFFICIENT SZ (%/K) at Itest MIN. 0.05 0.05 0.05 0.05 0.05 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.07 0.07 0.07 0.07 0.08 0.08 0.08 0.08 0.09 0.09 0.09 0.09 MAX. 0.09 0.10 0.10 0.10 0.10 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.12 0.12 0.12 0.12 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 TEST CURRENT Itest (mA) 50 50 50 50 50 25 25 25 25 25 25 25 25 10 10 10 10 10 10 10 10 10 10 5 5 5 5 CLAMPING VOLTAGE V(CL)R (V) at IRSM (A) note 1 MAX. 14.8 15.7 17.0 18.9 20.9 22.9 25.6 28.4 31.0 33.8 38.1 42.2 46.2 50.1 54.1 60.7 65.5 70.8 78.6 86.5 94.4 103.5 114 126 139 152 167 20.3 19.1 17.7 15.9 14.4 13.1 11.7 10.6 9.7 8.9 7.9 7.1 6.5 6.0 5.5 4.9 4.6 4.2 3.8 3.5 3.2 2.9 2.6 2.4 2.2 2.0 1.8 REVERSE CURRENT at STAND-OFF VOLTAGE IR (µA) MAX. 20 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 at VR (V)
TYPE NUMBER
1996 Sep 19
3
Philips Semiconductors
Preliminary specification
Transient voltage suppressor diodes
BZG04 series
TYPE NUMBER
REVERSE BREAKDOWN VOLTAGE V(BR)R (V) at Itest MIN. 124 138 153 168 188 208 228 251
TEMPERATURE COEFFICIENT SZ (%/K) at Itest MIN. 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 MAX. 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13
TEST CURRENT Itest (mA) 5 5 5 5 5 2 2 2
CLAMPING VOLTAGE V(CL)R (V) at IRSM (A) note 1 MAX. 185 204 224 249 276 305 336 380 1.6 1.5 1.3 1.2 1.1 1.0 0.9 0.8
REVERSE CURRENT at STAND-OFF VOLTAGE IR (µA) MAX. 5 5 5 5 5 5 5 5 at VR (V) 110 120 130 150 160 180 200 220
BZG04-110 BZG04-120 BZG04-130 BZG04-150 BZG04-160 BZG04-180 BZG04-200 BZG04-220 Note
1. Non-repetitive peak reverse current in accordance with “IEC 60-1, Section 8” (10/1000 µs pulse); see Fig.4. THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 note 2 Notes 1. Device mounted on an Al2O3 printed-circuit board, 0.7 mm thick; thickness of Cu-layer ≥35 µm, see Fig.5. 2. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.5. For more information please refer to the “General Part of associated Handbook”. CONDITIONS VALUE 25 100 150 UNIT K/W K/W K/W
1996 Sep 19
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Philips Semiconductors
Preliminary specification
Transient voltage suppressor diodes
GRAPHICAL DATA
BZG04 series
104 handbook, halfpage PZSM (W) 103
MBH452
handbook, halfpage
3
MBH453
IF (A) 2
102
1
10 10−2
10−1
0 1 tp (ms) 10 0 1 VF (V) 2
Tj = 25 °C prior to surge. Tj = 25 °C.
Fig.2
Maximum non-repetitive peak reverse power dissipation as a function of pulse duration (square pulse).
Fig.3
Forward current as a function of forward voltage; typical values.
IRSM handbook, halfpage (%) 100 90 50
4.5 50 2.5 10 t t1 t2
MGD521
50
1.25
MSB213
In accordance with “IEC 60-1, Section 8”. t1 = 10 µs. t2 = 1000 µs. Dimensions in mm.
Fig.4
Non-repetitive peak reverse current pulse definition.
Fig.5 Printed-circuit board for surface mounting.
1996 Sep 19
5
Philips Semiconductors
Prel.