BUK444-200B

Philips Semiconductors Product Specification PowerMOS transistor BUK444-200A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER BUK444 Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX. -200A 200 5.3 25 0.4 MAX. -200B 200 4.7 25 0.5 UNIT V A W Ω PINNING - SOT186 PIN 1 2 3 gate drain source DESCRIPTION PIN CONFIGURATION case SYMBOL d g case isolated 1 2 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction Temperature CONDITIONS RGS = 20 kΩ Ths = 25 ˚C Ths = 100 ˚C Ths = 25 ˚C Ths = 25 ˚C MIN. - 55 -200A 5.3 3.3 21 25 150 150 MAX. 200 200 30 -200B 4.7 3.0 19 UNIT V V V A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound MIN. TYP. 55 MAX. 5 UNIT K/W K/W April 1993 1 Rev 1.100 Philips Semiconductors Product Specification PowerMO...