BUK473-100B Datasheet

BUK473-100B PowerMOS transistor

N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. BUK473-100A/B QUICK REFERENCE DATA SYM.

Features

lse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ Ths = 25 ˚C Ths = 100 ˚C Ths = 25 ˚C Ths = 25 ˚C MIN. - 55 -100A 9 5.7 36 25 150 150 MAX. 100 100 30 -100B 8 5 32 UNIT V V V A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound MIN. TYP. 55 MAX. 5 UNIT K/W K/W November 1996 1 Rev 1.200 Philips Semiconductors Product specification PowerMOS transistor BUK473-100A/B STATIC CHARACTERISTICS Ths = 25 ˚C unless o.