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BUK482-100A Dataheets PDF



Part Number BUK482-100A
Manufacturers NXP
Logo NXP
Description PowerMOS transistor
Datasheet BUK482-100A DatasheetBUK482-100A Datasheet (PDF)

Philips Semiconductors Product Specification PowerMOS transistor BUK482-100A GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 10 .

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Philips Semiconductors Product Specification PowerMOS transistor BUK482-100A GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 10 V MAX. 100 1.8 1.8 150 0.28 UNIT V A W ˚C Ω PINNING - SOT223 PIN 1 2 3 4 gate drain source drain (tab) DESCRIPTION PIN CONFIGURATION 4 SYMBOL d g 1 2 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction Temperature CONDITIONS RGS = 20 kΩ Tamb = 25 ˚C Tamb = 100 ˚C Tamb = 25 ˚C Tamb = 25 ˚C MIN. - 55 MAX. 100 100 30 1.8 1.1 7.2 1.8 150 150 UNIT V V V A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL Rth j-b Rth j-amb PARAMETER From junction to board From junction to ambient 1 CONDITIONS Mounted on any PCB Mounted on PCB of Fig.17 MIN. - TYP. 40 - MAX. 70 UNIT K/W K/W 1 Temperature measured 1-3 mm from tab. January 1998 1 Rev 1.100 Philips Semiconductors Product Specification PowerMOS transistor BUK482-100A STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 mA VDS = VGS; ID = 1 mA VDS = 100 V; VGS = 0 V; VDS = 100 V; VGS = 0 V; Tj = 125 ˚C VGS = ±30 V; VDS = 0 V VGS = 10 V; ID = 1.8 A MIN. 100 2.1 TYP. 3.0 1 0.1 10 0.21 MAX. 4.0 10 1.0 100 0.28 UNIT V V µA mA nA Ω DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL gfs Ciss Coss Crss td on tr td off tf PARAMETER Forward transconductance Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time CONDITIONS VDS = 25 V; ID = 1.8 A VGS = 0 V; VDS = 25 V; f = 1 MHz VDD = 30 V; ID = 3 A; VGS = 10 V; RGS = 50 Ω; Rgen = 50 Ω MIN. 1.5 TYP. 2.5 300 90 35 9 25 30 20 MAX. 500 120 50 14 40 45 40 UNIT S pF pF pF ns ns ns ns REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS IF = 1.8 A; VGS = 0 V IF = 1.8 A; -dIF/dt = 100 A/µs; VGS = -10 V; VR = 30 V MIN. TYP. 0.85 80 0.30 MAX. 1.8 7.2 1.1 UNIT A A V ns µC AVALANCHE LIMITING VALUE SYMBOL WDSS PARAMETER Drain.


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