Document
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK482-100A
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose switching applications.
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 10 V MAX. 100 1.8 1.8 150 0.28 UNIT V A W ˚C Ω
PINNING - SOT223
PIN 1 2 3 4 gate drain source drain (tab) DESCRIPTION
PIN CONFIGURATION
4
SYMBOL
d
g
1
2
3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction Temperature CONDITIONS RGS = 20 kΩ Tamb = 25 ˚C Tamb = 100 ˚C Tamb = 25 ˚C Tamb = 25 ˚C MIN. - 55 MAX. 100 100 30 1.8 1.1 7.2 1.8 150 150 UNIT V V V A A A W ˚C ˚C
THERMAL RESISTANCES
SYMBOL Rth j-b Rth j-amb PARAMETER From junction to board From junction to ambient
1
CONDITIONS Mounted on any PCB Mounted on PCB of Fig.17
MIN. -
TYP. 40 -
MAX. 70
UNIT K/W K/W
1 Temperature measured 1-3 mm from tab.
January 1998
1
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK482-100A
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 mA VDS = VGS; ID = 1 mA VDS = 100 V; VGS = 0 V; VDS = 100 V; VGS = 0 V; Tj = 125 ˚C VGS = ±30 V; VDS = 0 V VGS = 10 V; ID = 1.8 A MIN. 100 2.1 TYP. 3.0 1 0.1 10 0.21 MAX. 4.0 10 1.0 100 0.28 UNIT V V µA mA nA Ω
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified SYMBOL gfs Ciss Coss Crss td on tr td off tf PARAMETER Forward transconductance Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time CONDITIONS VDS = 25 V; ID = 1.8 A VGS = 0 V; VDS = 25 V; f = 1 MHz VDD = 30 V; ID = 3 A; VGS = 10 V; RGS = 50 Ω; Rgen = 50 Ω MIN. 1.5 TYP. 2.5 300 90 35 9 25 30 20 MAX. 500 120 50 14 40 45 40 UNIT S pF pF pF ns ns ns ns
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS IF = 1.8 A; VGS = 0 V IF = 1.8 A; -dIF/dt = 100 A/µs; VGS = -10 V; VR = 30 V MIN. TYP. 0.85 80 0.30 MAX. 1.8 7.2 1.1 UNIT A A V ns µC
AVALANCHE LIMITING VALUE
SYMBOL WDSS PARAMETER Drain.