Silicon Epitaxial Planar Transistor
FEATURES
z High transition frequency. z Power dissipation.(PC=350mW).
Pb
Lead-free...
Silicon Epitaxial Planar
Transistor
FEATURES
z High transition frequency. z Power dissipation.(PC=350mW).
Pb
Lead-free
APPLICATIONS
z VHF/UHF
Transistor.
Production specification
MMBTH10
ORDERING INFORMATION
Type No.
Marking
MMBTH10
3EM
SOT-23
Package Code SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
30
VCEO
Collector-Emitter Voltage
25
VEBO
Emitter-Base Voltage
3
IC Collector Current -Continuous
50
PC Collector Dissipation
350
Tj,Tstg
Junction and Storage Temperature
-55 to +150
Units V V V mA mW ℃
C125 Rev.A
www.gmicroelec.com 1
Production specification
Silicon Epitaxial Planar
Transistor
MMBTH10
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=100μA,IE=0
30
V
Collector-emitter breakdown voltage
V(BR)CEO IC=1mA,IB=0
25 V
Emitter-base breakdown voltage
V(BR)EBO IE...
