BUK583-60A

Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose switching applications. BUK583-60A QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX. 60 3.2 1.8 150 0.10 UNIT V A W ˚C Ω PINNING - SOT223 PIN 1 2 3 4 gate drain source drain (tab) DESCRIPTION PIN CONFIGURATION 4 SYMBOL d g 1 2 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ Tamb = 25 ˚C Tamb = 100 ˚C Tamb = 25 ˚C Tamb = 25 ˚C MIN. - 55 MAX. 60 60 15 3.2 2.0 13 1.8 150 150 UNIT V V V A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL Rth j-sp Rth j-amb PARAMETER From junction to solder point From junction to ambient 1 CONDITIONS Mounted on any PCB Mounted on PCB of fig.18 MIN. - TYP. 12 - MAX. 15 70 UNIT K/W K/W 1 Temperature measured at solder joint on drain tab. September 1995 1 Rev 1.200 Philips Semiconductors Pr...