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BUK7610-100B Dataheets PDF



Part Number BUK7610-100B
Manufacturers NXP
Logo NXP
Description N-channel TrenchMOS standard level FET
Datasheet BUK7610-100B DatasheetBUK7610-100B Datasheet (PDF)

BUK7610-100B N-channel TrenchMOS standard level FET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits • Low conduction losses due to low on-state resistance • Q101 compliant • Suitable for standard level.

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BUK7610-100B N-channel TrenchMOS standard level FET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits • Low conduction losses due to low on-state resistance • Q101 compliant • Suitable for standard level gate drive sources • Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications • 12 V, 24 V and 42 V loads • Automotive systems • General purpose power switching • Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 1; Fig. 3 Ptot total power dissipation Tmb = 25 °C; Fig. 2 Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C; resistance Fig. 11; Fig. 12 Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 25 A; VDS = 80 V; Tj = 25 °C; Fig. 13 Avalanche ruggedness EDS(AL)S non-repetitive drainsource avalanche energy ID = 75 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped [1] Min Typ Max Unit - - 100 V - - 75 A - - 300 W - 8.6 10 mΩ - 22 - nC - - 629 mJ Scan or click this QR code to view the latest information for this product NXP Semiconductors BUK7610-100B N-channel TrenchMOS standard level FET [1] Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 G gate mb 2 D drain[1] 3 S source mb D mounting base; connected to drain 2 13 D2PAK (SOT404) [1] It is not possible to make connection to pin 2. Graphic symbol D G mbb076 S 3. Ordering information Table 3. Ordering information Type number Package Name BUK7610-100B D2PAK Description Version plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404 (one lead cropped) 4. Marking Table 4. Marking codes Type number BUK7610-100B Marking code BUK7610-100B 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C VDGR drain-gate voltage RGS = 20 kΩ VGS gate-source voltage ID drain current Tmb = 25 °C; VGS = 10 V; Fig. 1; Fig. 3 IDM peak drain current BUK7610-100B Product data sheet Tmb = 100 °C; VGS = 10 V; Fig. 1 Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 3 All information provided in this document is subject to legal disclaimers. 6 July 2012 [1] [2] [2] Min Max Unit - 100 V - 100 V -20 20 V - 110 A - 75 A - 75 A - 438 A © NXP B.V. 2012. All rights reserved 2 / 12 NXP Semiconductors BUK7610-100B N-channel TrenchMOS standard level FET Symbol Parameter Ptot total power dissipation Tstg storage temperature Tj junction temperature Source-drain diode IS source current ISM peak source current Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Conditions Tmb = 25 °C; Fig. 2 Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C [1] [2] ID = 75 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped [1] Current is limited by power dissipation chip rating. [2] Continuous current is limited by package. 120 ID (A) 03ng70 Capped at 75 A due to package 120 Pder (%) 80 80 Min Max Unit - 300 W -55 175 °C -55 175 °C - 110 A - 75 A - 438 A - 629 mJ 03na19 40 40 0 0 50 100 150 200 Tmb (°C) Fig. 1. Normalized continuous drain current as a function of mounting base temperature 0 0 50 100 150 200 Tmb (°C) Fig. 2. Normalized total power dissipation as a function of mounting base temperature BUK7610-100B Product data sheet All information provided in this document is subject to legal disclaimers. 6 July 2012 © NXP B.V. 2012. All rights reserved 3 / 12 NXP Semiconductors BUK7610-100B N-channel TrenchMOS standard level FET 103 ID (A) 102 Limit RDSon = VDS/ ID tp =10 µ s 100 µ s 003aag933 10 Capped at 75 A due to package DC 1 1 ms 10 ms 100 ms 10-1 1 10 102 103 VDS (V) Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Symbol Rth(j-mb) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient Conditions Fig. 4 mounted on printed-circuit board ; minimum footprint Min Typ Max Unit - - 0.5 K/W - 50 - K/W 1 Zth(j-mb) (K/W) δ = 0.5 10- 1 10- 2 0.2 0.1 0.05 0.02 03ng69 P δ = tp T Single Shot 10- 3 10- 6 10- 5 10- 4 10- 3 10- 2 tp T t 10- 1 tp (s) 1 Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7610-100B Product data sheet All information provided in this documen.


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