Document
BUK7610-100B
N-channel TrenchMOS standard level FET
6 July 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits • Low conduction losses due to low on-state resistance • Q101 compliant • Suitable for standard level gate drive sources • Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications • 12 V, 24 V and 42 V loads • Automotive systems • General purpose power switching • Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1; Fig. 3
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 11; Fig. 12
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 25 A; VDS = 80 V;
Tj = 25 °C; Fig. 13
Avalanche ruggedness
EDS(AL)S
non-repetitive drainsource avalanche energy
ID = 75 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped
[1]
Min Typ Max Unit - - 100 V - - 75 A - - 300 W
-
8.6 10
mΩ
- 22 - nC
- - 629 mJ
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NXP Semiconductors
BUK7610-100B
N-channel TrenchMOS standard level FET
[1] Continuous current is limited by package.
2. Pinning information
Table 2. Pinning information Pin Symbol Description
Simplified outline
1 G gate
mb
2 D drain[1]
3 S source
mb D
mounting base; connected to drain
2 13
D2PAK (SOT404)
[1] It is not possible to make connection to pin 2.
Graphic symbol
D
G mbb076 S
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
BUK7610-100B
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404 (one lead cropped)
4. Marking
Table 4. Marking codes Type number BUK7610-100B
Marking code BUK7610-100B
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
VDGR
drain-gate voltage
RGS = 20 kΩ
VGS gate-source voltage
ID drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1; Fig. 3
IDM peak drain current
BUK7610-100B
Product data sheet
Tmb = 100 °C; VGS = 10 V; Fig. 1 Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 3
All information provided in this document is subject to legal disclaimers.
6 July 2012
[1] [2] [2]
Min Max Unit - 100 V
- 100 V
-20 20
V
- 110 A - 75 A
- 75 A
- 438 A
© NXP B.V. 2012. All rights reserved
2 / 12
NXP Semiconductors
BUK7610-100B
N-channel TrenchMOS standard level FET
Symbol
Parameter
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
IS source current
ISM peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source avalanche energy
Conditions Tmb = 25 °C; Fig. 2
Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C
[1] [2]
ID = 75 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped
[1] Current is limited by power dissipation chip rating. [2] Continuous current is limited by package.
120
ID (A)
03ng70
Capped at 75 A due to package
120
Pder (%)
80 80
Min Max Unit - 300 W -55 175 °C -55 175 °C
- 110 A - 75 A - 438 A
- 629 mJ
03na19
40 40
0 0 50 100 150 200 Tmb (°C)
Fig. 1. Normalized continuous drain current as a function of mounting base temperature
0 0 50 100 150 200 Tmb (°C)
Fig. 2. Normalized total power dissipation as a function of mounting base temperature
BUK7610-100B
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 July 2012
© NXP B.V. 2012. All rights reserved
3 / 12
NXP Semiconductors
BUK7610-100B
N-channel TrenchMOS standard level FET
103 ID (A)
102
Limit RDSon = VDS/ ID
tp =10 µ s 100 µ s
003aag933
10 Capped at 75 A due to package DC
1
1 ms
10 ms 100 ms
10-1 1
10 102 103 VDS (V)
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
6. Thermal characteristics
Table 6. Symbol Rth(j-mb)
Rth(j-a)
Thermal characteristics Parameter
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
Conditions Fig. 4
mounted on printed-circuit board ; minimum footprint
Min Typ Max Unit - - 0.5 K/W
- 50 - K/W
1
Zth(j-mb) (K/W)
δ = 0.5
10- 1 10- 2
0.2 0.1 0.05 0.02
03ng69 P δ = tp
T
Single Shot
10- 3 10- 6
10- 5
10- 4
10- 3
10- 2
tp T
t
10- 1 tp (s)
1
Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7610-100B
Product data sheet
All information provided in this documen.