BUK7610-100B
N-channel TrenchMOS standard level FET
6 July 2012
Product data sheet
1. Product profile
1.1 General des...
BUK7610-100B
N-channel TrenchMOS standard level FET
6 July 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits Low conduction losses due to low on-state resistance Q101 compliant Suitable for standard level gate drive sources Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications 12 V, 24 V and 42 V loads Automotive systems General purpose power switching Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1; Fig. 3
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 11; Fig. 12
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 25 A; VDS = 80 V;
Tj = 25 °C; Fig. 13
Avalanche ruggedness
EDS(AL)S
non-repetitive drainsource avalanche energy
ID = 75 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped
[1]
Min Typ Max Unit - - 100 V - - 75 A - - 300 W
-
8.6 10
mΩ
- 22 - nC
- - 629 mJ
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