BUK7610-100B

BUK7610-100B N-channel TrenchMOS standard level FET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low on-state resistance Q101 compliant Suitable for standard level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications 12 V, 24 V and 42 V loads Automotive systems General purpose power switching Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 1; Fig. 3 Ptot total power dissipation Tmb = 25 °C; Fig. 2 Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C; resistance Fig. 11; Fig. 12 Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 25 A; VDS = 80 V; Tj = 25 °C; Fig. 13 Avalanche ruggedness EDS(AL)S non-repetitive drainsource avalanche energy ID = 75 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped [1] Min Typ Max Unit - - 100 V - - 75 A - - 300 W - 8.6 10 mΩ - 22 - nC - - 629 mJ Scan or click this QR code to view the latest information for...