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BUK866-400IZ Dataheets PDF



Part Number BUK866-400IZ
Manufacturers NXP
Logo NXP
Description Insulated Gate Bipolar Transistor Protected Logic-Level IGBT
Datasheet BUK866-400IZ DatasheetBUK866-400IZ Datasheet (PDF)

Philips Semiconductors Product specification Insulated Gate Bipolar Transistor Protected Logic-Level IGBT GENERAL DESCRIPTION Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope suitable for surface mount applications. It is intended for automotive ignition applications, and has integral zener diodes providing active collector voltage clamping and ESD protection up to 2 kV. BUK866-400 IZ QUICK REFERENCE DATA SYMBOL PARAMETER V(CL)CER VCEsat IC Ptot E.

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Philips Semiconductors Product specification Insulated Gate Bipolar Transistor Protected Logic-Level IGBT GENERAL DESCRIPTION Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope suitable for surface mount applications. It is intended for automotive ignition applications, and has integral zener diodes providing active collector voltage clamping and ESD protection up to 2 kV. BUK866-400 IZ QUICK REFERENCE DATA SYMBOL PARAMETER V(CL)CER VCEsat IC Ptot ECERS Collector-emitter clamp voltage Collector-emitter on-state voltage Collector current (DC) Total power dissipation Clamped energy dissipation MIN. TYP. MAX. UNIT 350 400 500 2.2 20 100 300 V V A W mJ PINNING - SOT404 PIN 1 2 3 tab gate collector emitter collector DESCRIPTION PIN CONFIGURATION mb SYMBOL c g 2 1 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VCE VCE ±VGE IC IC ICM ICLM ECERS ECERR EECR Ptot Tstg Tj PARAMETER Collecter-emitter voltage Collector-emitter voltage Gate-emitter voltage Collector current (DC) Collector current (DC) Collector current (pulsed peak value, on-state) Collector current (clamped inductive load) Clamped turn-off energy (non-repetitive) Clamped turn-off energy (repetitive) Reverse avalanche energy (repetitive) Total power dissipation Storage temperature Operating Junction Temperature CONDITIONS tp ≤ 500 µs Continuous Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C; tp ≤ 10 ms; VCE ≤ 15 V 1 kΩ ≤ RG ≤ 10 kΩ Tmb = 25 ˚C; IC = 10 A; RG = 1 kΩ; see Figs. 23,24 Tmb = 125 ˚C; IC = 8 A; RG = 1 kΩ; f = 50 Hz; t = 60 min. IE = 1 A; f = 50 Hz Tmb = 25 ˚C MIN. -20 -55 -40 MAX. 500 50 12 10 20 25 10 300 125 5 125 150 150 UNIT V V V A A A A mJ mJ mJ W ˚C ˚C ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model (100 pF, 1.5 kΩ) MIN. MAX. 2 UNIT kV December 1996 1 Rev. 1.100 Philips Semiconductors Product specification Insulated Gate Bipolar Transistor Protected Logic-Level IGBT THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS minimum footprint, FR4 board (see Fig. 26). BUK866-400 IZ TYP. 50 MAX. 1.0 - UNIT K/W K/W STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL V(BR)CG V(BR)EC ±V(BR)GES VGE(TO) VGE(TO) ICES ICES IEC IEC IGES VCEsat PARAMETER Collector-gate zener breakdown voltage Reverse collector-emitter breakdown voltage Gate-emitter breakdown voltage Gate threshold voltage Gate threshold voltage Zero gate voltage collector current Zero gate voltage collector current Reverse collector current Reverse collector current Gate emitter leakage current Collector-emitter on-state voltage CONDITIONS 2 mA ≤ -IG ≤ 5 mA; -40 ≤ Tj ≤150˚C IE = 10 mA IG = ± 1 mA VCE = VGE; IC = 1 mA VCE = VGE; IC = 1 mA; -40 ≤ Tj ≤150˚C VCE = 50 V; VGE = 0 V; Tj = 25 ˚C Tj = 125 ˚C VCE = -20 V VCE = -20 V; Tj = 125˚C VGE = ±6 V Tj = 150˚C VGE = 4.5 V; IC = 8 A VGE = 3.5 V; IC = 6 A; -40 ≤ Tj ≤150˚C MIN. 350 20 12 1 0.6 TYP. 400 30 16 1.5 0.01 0.01 0.2 2 0.1 5 1.2 1.2 MAX. 500 50 20 2 2.4 10 1 5 20 1 100 2.2 2.2 UNIT V V V V V µA mA mA mA µA µA V V DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL V(CL)CER PARAMETER CONDITIONS MIN. 350 TYP. 400 MAX. 500 UNIT V Collector-emitter clamp voltage RG = 1 kΩ; IC = 10 A; (peak value) -40 ≤ Tj ≤150˚C; Inductive load; see Figs. 23,24 Forward transconductance Input capacitance Output capacitance Feedback capacitance Turn-off delay time Fall time Crossover Time Turn-off Energy loss VCE = 15 V; IC = 4 A VGE = 0 V; VCE = 25 V; f = 1 MHz gfe Cies Coes Cres td off tf tc Eoff 5.5 - 15 940 95 30 13 6 12 13 20 1200 130 50 18 10 - S pF pF pF µs µs µs mJ IC = 8 A; VCL = 300 V; RG = 1 kΩ; VGE = 5 V; Tj = 125˚C; Inductive load; see Figs. 20,21 December 1996 2 Rev. 1.100 Philips Semiconductors Product specification Insulated Gate Bipolar Transistor Protected Logic-Level IGBT BUK866-400 IZ 1E+01 Zth(j-mb) / (K/W) 120 110 100 90 80 70 60 50 40 P D t p t D= p T PD% Normalised Power Derating 1E+00 D= 0.5 0.2 1E-01 0.1 0.05 0.02 1E-02 0 30 20 10 0 1E+01 t T 1E-03 1E-07 1E-05 1E-03 t/s 1E-01 0 20 40 60 80 100 Tmb / C 120 140 Fig.1. Transient thermal impedance Z th j-mb = f(t) ; parameter D = tp/T IC / A I CLM 10 BUK8Y6-400IZ Fig.4. Normalised power dissipation. PD% = 100.PD/PD 25˚C = f(Tmb) ICLM / A BUK8Y6-400IZ 15 10 Self-clamped 1 5 0.1 0 200 VCE / V 400 600 0 0 50 100 150 dVCE/dt (V/us) 200 Fig.2. Turn-off Safe Operating Area conditions: Tj ≤ Tjmax. ; RG ≥ 1 kΩ VCE / V Tj / C = 150 25 -40 Fig.5. Derating of ICLM with turn-off dVCE/dt conditions: VCE ≤ 500 V; Tj ≤ Tjmax. VCE / V 150 Tj / C = 25 -40 3 PMG35A 2 PMG35A 1.5 2 1 1 0.5 0 0 4 8 12 16 IC / A 20 24 0 0 4 8 12 16 IC / A 20 24 Fig.3. Typical On-state Voltage VCEsat = f(IC); parameter Tj; conditions: VGE = 3.5 V Fig.6. Typical On-state Volt.


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