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BUK9505-30A Dataheets PDF



Part Number BUK9505-30A
Manufacturers NXP
Logo NXP
Description TrenchMOS transistor Logic level FET
Datasheet BUK9505-30A DatasheetBUK9505-30A Datasheet (PDF)

Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology which features very low on-state resistance. It is intended for use in automotive and general purpose switching applications. BUK9505-30A QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temp.

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Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology which features very low on-state resistance. It is intended for use in automotive and general purpose switching applications. BUK9505-30A QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V VGS = 10 V MAX. 30 75 230 175 5 4.6 UNIT V A W ˚C mΩ mΩ PINNING - TO220AB PIN 1 2 3 tab gate drain DESCRIPTION PIN CONFIGURATION tab SYMBOL d g source drain 1 23 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ±VGSM ID ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Non-repetitive gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature CONDITIONS RGS = 20 kΩ tp≤50µS Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 30 30 10 15 75 75 400 230 175 UNIT V V V V A A A W ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS in free air TYP. 60 MAX. 0.65 UNIT K/W K/W August 1999 1 Rev 1.100 Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET STATIC CHARACTERISTICS Tj= 25˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 mA; Tj = -55˚C VDS = VGS; ID = 1 mA Tj = 175˚C Tj = -55˚C VDS = 30 V; VGS = 0 V; VGS = ±10 V; VDS = 0 V VGS = 5 V; ID = 25 A VGS = 10 V; ID = 25 A VGS = 4.5 V; ID = 25 A Tj = 175˚C Tj = 175˚C MIN. 30 27 1 0.5 - BUK9505-30A TYP. 1.5 0.05 2 4.3 3.9 - MAX. 2.0 2.3 10 500 100 5 9.3 4.6 5.4 UNIT V V V V V µA µA nA mΩ mΩ mΩ mΩ DYNAMIC CHARACTERISTICS Tmb = 25˚C unless otherwise specified SYMBOL Ciss Coss Crss td on tr td off tf Ld Ld Ls PARAMETER Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal source inductance CONDITIONS VGS = 0 V; VDS = 25 V; f = 1 MHz MIN. TYP. 6500 1500 1000 45 220 435 320 3.5 4.5 7.5 MAX. 8600 1800 1350 65 330 600 450 UNIT pF pF pF ns ns ns ns nH nH nH VDD = 30 V; Rload =1.2Ω; VGS = 5 V; RG = 10 Ω Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tj = 25˚C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS MIN. IF = 25 A; VGS = 0 V IF = 75 A; VGS = 0 V IF = 75 A; -dIF/dt = 100 A/µs; VGS = -10 V; VR = 30 V TYP. 0.85 1.1 400 1.0 MAX. 75 240 1.2 UNIT A A V V ns µC August 1999 2 Rev 1.100 Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET AVALANCHE LIMITING VALUE SYMBOL WDSS PARAMETER Drain-source non-repetitive unclamped inductive turn-off energy CONDITIONS ID = 75 A; VDD ≤ 25 V; VGS = 5 V; RGS = 50 Ω; Tmb = 25 ˚C MIN. - BUK9505-30A TYP. - MAX. 500 UNIT mJ 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Derating 1000 ID/A RDS(ON) = VDS/ID 100 tp = 100uS 1mS 10mS 10 DC 100mS 0 20 40 60 80 100 Tmb / C 120 140 160 180 1 1 10 VDS/V 100 Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Tmb) ID% Normalised Current Derating Fig.3. Safe operating area. Tmb = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp 120 110 100 90 80 70 60 50 40 30 20 10 0 1 D= 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0 Zth / (K/W) P D tp D= tp T t T 0 20 40 60 80 100 Tmb / C 120 140 160 180 0.001 0.00001 0.001 t/S 0.1 10 Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 5 V Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T August 1999 3 Rev 1.100 Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET BUK9505-30A 10.0 7.0 ID/V 6.0 5.0 300 400 4.8 4.6 4.4 100 VGS/V = 4.2 4.0 3.8 3.6 ID/A 80 60 Tj/C = 40 175 25 200 3.4 3.2 3.0 2.8 2.6 2.4 100 20 0 0 0 2 4 VDS/V 6 8 10 0 0.5 1 1.5 VGS/V 2 2.5 3 3.5 Fig.5. Typical output characteristics, Tj = 25 ˚C. ID = f(VDS); parameter VGS RDS(ON)/mOhm Fig.8. Typical transfer characteristics. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj 150 gfs/S 11 10 9 VGS/V = 8 7 6 5 4.


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