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BUK9510-30 Dataheets PDF



Part Number BUK9510-30
Manufacturers NXP
Logo NXP
Description TrenchMOS transistor Logic level FET
Datasheet BUK9510-30 DatasheetBUK9510-30 Datasheet (PDF)

Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and general purpose switching applications. BUK9510-30 QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-sour.

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Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and general purpose switching applications. BUK9510-30 QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX. 30 75 142 175 10.5 UNIT V A W ˚C mΩ PINNING - TO220AB PIN 1 2 3 tab gate drain source drain DESCRIPTION PIN CONFIGURATION tab SYMBOL d g s 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 30 30 10 75 53 240 142 175 UNIT V V V A A A W ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS in free air TYP. 60 MAX. 1.05 UNIT K/W K/W ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model (100 pF, 1.5 kΩ) MIN. MAX. 2 UNIT kV December 1997 1 Rev 1.100 Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET STATIC CHARACTERISTICS Tj= 25˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IGSS ±V(BR)GSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate source leakage current Gate-source breakdown voltage Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 mA; Tj = -55˚C VDS = VGS; ID = 1 mA Tj = 175˚C Tj = -55˚C VDS = 30 V; VGS = 0 V; VGS = ±5 V; VDS = 0 V IG = ±1 mA; VGS = 5 V; ID = 25 A Tj = 175˚C Tj = 175˚C Tj = 175˚C MIN. 30 27 1.0 0.5 10 TYP. 1.5 0.05 0.02 9 - BUK9510-30 MAX. 2.0 2.3 10 500 1 10 10.5 19.5 UNIT V V V V V µA uA µA µA V mΩ mΩ DYNAMIC CHARACTERISTICS Tmb = 25˚C unless otherwise specified SYMBOL gfs Qg(tot) Qgs Qgd Ciss Coss Crss td on tr td off tf Ld Ld Ls PARAMETER Forward transconductance Total gate charge Gate-source charge Gate-drain (Miller) charge Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal source inductance CONDITIONS VDS = 25 V; ID = 25 A ID = 75 A; VDD = 24 V; VGS = 5 V MIN. 12 TYP. 25 58 6 24 2500 640 320 35 95 130 60 3.5 4.5 7.5 MAX. 50 145 180 80 UNIT S nC nC nC pF pF pF ns ns ns ns nH nH nH VGS = 0 V; VDS = 25 V; f = 1 MHz VDD = 15 V; ID = 25 A; VGS = 5 V; RG = 5 Ω Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad December 1997 2 Rev 1.100 Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tj = 25˚C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS MIN. IF = 25 A; VGS = 0 V IF = 75 A; VGS = 0 V IF = 75 A; -dIF/dt = 100 A/µs; VGS = -10 V; VR = 25 V TYP. 0.95 1.0 70 0.14 BUK9510-30 MAX. 75 240 1.2 - UNIT A A V V ns µC AVALANCHE LIMITING VALUE SYMBOL WDSS PARAMETER Drain-source non-repetitive unclamped inductive turn-off energy CONDITIONS ID = 45 A; VDD ≤ 25 V; VGS = 5 V; RGS = 50 Ω; Tmb = 25 ˚C MIN. TYP. MAX. 200 UNIT mJ December 1997 3 Rev 1.100 Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET BUK9510-30 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Derating 1E+01 Zth / (K/W) BUKX514-55 1E+00 0.5 1E-01 0.2 0.1 0.05 0.02 1E-02 0 T t P D tp D= tp T 0 20 40 60 80 100 Tmb / C 120 140 160 180 1E-03 1E-07 1E-05 1E-03 t/s 1E-01 1E+01 Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Tmb) ID% Normalised Current Derating Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T ID / A 6 5 VGS / V = 3.2 60 3 40 2.8 2.6 20 2.4 2.2 0 2 4 VDS / V 6 8 10 4 120 110 100 90 80 70 60 50 40 30 20 10 0 100 BUK9510-30 3.5 80 0 20 40 60 80 100 Tmb / C 120 140 160 180 0 Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 5 V Fig.5. Typical output characteristics, Tj = 25 ˚C. ID = f(VDS); parameter VGS RDS(ON) / mOhm 20 3.2 3.5 1000 ID / A ID 7510-30 9510-30 100 RD S(O = N) V.


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