Document
Philips Semiconductors
Product specification
TrenchMOS™ transistor Logic level FET
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and general purpose switching applications.
BUK9614-55
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX. 55 68 142 175 14 UNIT V A W ˚C mΩ
PINNING - SOT404
PIN 1 2 3 mb gate drain source drain DESCRIPTION
PIN CONFIGURATION
mb
SYMBOL
d
g
2 1 3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 55 55 10 68 48 240 142 175 UNIT V V V A A A W ˚C
ESD LIMITING VALUE
SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model (100 pF, 1.5 kΩ) MIN. MAX. 2 UNIT kV
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS Minimum footprint, FR4 board TYP. 50 MAX. 1.05 UNIT K/W K/W
April 1998
1
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS™ transistor Logic level FET
STATIC CHARACTERISTICS
Tj= 25˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IGSS ±V(BR)GSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate source leakage current Gate-source breakdown voltage Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 mA; Tj = -55˚C VDS = VGS; ID = 1 mA Tj = 175˚C Tj = -55˚C VDS = 55 V; VGS = 0 V; VGS = ±5 V; VDS = 0 V IG = ±1 mA; VGS = 5 V; ID = 25 A Tj = 175˚C Tj = 175˚C Tj = 175˚C MIN. 55 50 1.0 0.5 10 TYP. 1.5 0.05 0.02 12 -
BUK9614-55
MAX. 2.0 2.3 10 500 1 10 14 30
UNIT V V V V V µA uA µA µA V mΩ mΩ
DYNAMIC CHARACTERISTICS
Tmb = 25˚C unless otherwise specified SYMBOL gfs Ciss Coss Crss td on tr td off tf Ld Ls PARAMETER Forward transconductance Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal source inductance CONDITIONS VDS = 25 V; ID = 25 A VGS = 0 V; VDS = 25 V; f = 1 MHz MIN. 30 TYP. 65 2900 500 240 35 95 130 60 2.5 7.5 MAX. 3800 600 330 50 145 180 80 UNIT S pF pF pF ns ns ns ns nH nH
VDD = 30 V; ID = 25 A; VGS = 5 V; RG = 10 Ω
Measured from upper edge of drain tab to centre of die Measured from source .