DatasheetsPDF.com

BUK96180-100A Dataheets PDF



Part Number BUK96180-100A
Manufacturers NXP
Logo NXP
Description Logic level FET
Datasheet BUK96180-100A DatasheetBUK96180-100A Datasheet (PDF)

Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features very low on-state resistance. It is intended for use in automotive and general purpose switching applications. BUK95180-100A BUK96180-100A QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain c.

  BUK96180-100A   BUK96180-100A


Document
Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features very low on-state resistance. It is intended for use in automotive and general purpose switching applications. BUK95180-100A BUK96180-100A QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V VGS = 10 V MAX. 100 11 54 175 180 173 UNIT V A W ˚C mΩ mΩ PINNING TO220AB & SOT404 PIN 1 2 3 DESCRIPTION gate drain 2 mb tab PIN CONFIGURATION SYMBOL d g 3 SOT404 BUK96180-100A source 1 tab/mb drain 1 2 3 TO220AB BUK95180-100A s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 100 100 15 11 7.7 44 54 175 UNIT V V V A A A W ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient(TO220AB) Thermal resistance junction to ambient(SOT404) CONDITIONS in free air Minimum footprint, FR4 board TYP. 60 50 MAX. 2.8 UNIT K/W K/W K/W May 2000 1 Rev 1.100 Philips Semiconductors Product specification TrenchMOS transistor Logic level FET STATIC CHARACTERISTICS Tj= 25˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 mA; Tj = -55˚C VDS = VGS; ID = 1 mA Tj = 175˚C Tj = -55˚C VDS = 100 V; VGS = 0 V; VGS = ±10 V; VDS = 0 V VGS = 5 V; ID = 5 A VGS = 10 V; ID = 5 A VGS = 4.5 V; ID = 5 A Tj = 175˚C Tj = 175˚C MIN. 100 89 1 0.5 - BUK95180-100A BUK96180-100A TYP. 1.5 0.05 2 165 152 170 MAX. 2.0 2.3 10 500 100 180 450 173 200 UNIT V V V V V µA µA nA mΩ mΩ mΩ mΩ DYNAMIC CHARACTERISTICS Tmb = 25˚C unless otherwise specified SYMBOL Ciss Coss Crss td on tr td off tf Ld Ld Ld Ls PARAMETER Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal drain inductance Internal source inductance CONDITIONS VGS = 0 V; VDS = 25 V; f = 1 MHz MIN. TYP. 464 60 37 9 112 18 25 4.5 3.5 2.5 7.5 MAX. 619 72 50 20 157 27 38 UNIT pF pF pF ns ns ns ns nH nH nH nH VDD = 30 V; Rload =1.2Ω; VGS = 5 V; RG = 10 Ω Measured from drain lead 6 mm from package to centre of die Measured from contact screw on tab to centre of die(TO220AB) Measured from upper edge of drain tab to centre of die(SOT404) Measured from source lead to source bond pad REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tj = 25˚C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS MIN. IF = 5 A; VGS = 0 V IF = 11 A; VGS = 0 V IF = 11 A; -dIF/dt = 100 A/µs; VGS = -10 V; VR = 30 V TYP. 0.85 1.1 49 0.13 MAX. 11 44 1.2 UNIT A A V V ns µC May 2000 2 Rev 1.100 Philips Semiconductors Product specification TrenchMOS transistor Logic level FET AVALANCHE LIMITING VALUE SYMBOL W 1 DSS BUK95180-100A BUK96180-100A PARAMETER Drain-source non-repetitive unclamped inductive turn-off energy CONDITIONS ID = 5.5 A; VDD ≤ 25 V; VGS = 5 V; RGS = 50 Ω; Tmb = 25 ˚C MIN. - TYP. - MAX. 1.5 UNIT mJ ! 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Derating 100 ID/A RDS(ON)=VSD/ID 10 DC 1 0 20 40 60 80 100 Tmb / C 120 140 160 180 0.1 1 10 VSD/V 100 1000 Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Tmb) ID% Normalised Current Derating Fig.3. Safe operating area. Tmb = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp 120 110 100 90 80 70 60 50 40 30 20 10 0 Zth/(K/W) 10 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 0 0 20 40 60 80 100 Tmb / C 120 140 160 180 0.001 1E-07 1E-05 t/s 1E-03 1E-01 1E+01 Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 5 V Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T 1 For maximum permissible repetive avalanche current see fig.18. May 2000 3 Rev 1.100 Philips Semiconductors Product specification TrenchMOS transistor Logic level FET BUK95180-100A BUK96180-100A 25 ID/A 20 15 10 5 0 0 2 4 VDS/V 6 VGS/V = 10.0 5.0 4.0 3.8 3.6 3.4 3.2 3.0 2.8 2.6 2.4 2.2 8 10 12 ID/A 10 8 6 4 .


BUK9618-55 BUK96180-100A BUK9620-55


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)