MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BUL147/D
™ Data Sheet SWITCHMODE™
Designer's
NPN Bipola...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BUL147/D
™ Data Sheet SWITCHMODE™
Designer's
NPN Bipolar Power
Transistor For Switching Power Supply Applications
The BUL147/BUL147F have an applications specific state–of–the–art die designed for use in electric fluorescent lamp ballasts to 180 Watts and in Switchmode Power supplies for all types of electronic equipment. These high–voltage/high–speed
transistors offer the following: Improved Efficiency Due to Low Base Drive Requirements: — High and Flat DC Current Gain — Fast Switching — No Coil Required in Base Circuit for Turn–Off (No Current Tail) Parametric Distributions are Tight and Consistent Lot–to–Lot Two Package Choices: Standard TO–220 or Isolated TO–220 BUL147F, Isolated Case 221D, is UL Recognized to 3500 VRMS: File #E69369 MAXIMUM RATINGS
Rating Collector–Emitter Sustaining Voltage Collector–Emitter Breakdown Voltage Emitter–Base Voltage Collector Current — Continuous — Peak(1) Base Current — Continuous — Peak(1) RMS Isolated Voltage(2) (for 1 sec, R.H. < 30%, TC = 25°C) Total Device Dissipation Derate above 25°C Test No. 1 Per Fig. 22a Test No. 2 Per Fig. 22b Test No. 3 Per Fig. 22c (TC = 25°C) Symbol VCEO VCES VEBO IC ICM IB IBM VISOL BUL147 BUL147F 400 700 9.0 8.0 16 4.0 8.0 — — — 125 1.0 4500 3500 1500 45 0.36 Unit Vdc Vdc Vdc Adc Adc Volts
BUL147* BUL147F*
*Motorola Preferred Device
POWER
TRANSISTOR 8.0 AMPERES 700 VOLTS 45 and 125 WATTS
BUL147 CASE 221A–06 TO–220AB
PD TJ, Tstg
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