MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BUL45/D
Designer's
NPN Silicon Power Transistor
High Vo...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BUL45/D
Designer's
NPN Silicon Power
Transistor
High Voltage SWITCHMODE
™ Data Sheet
BUL45 * BUL45F*
*Motorola Preferred Device
t Series
Designed for use in electronic ballast (light ballast) and in Switchmode Power supplies up to 50 Watts. Main features include: Improved Efficiency Due to: — Low Base Drive Requirements (High and Flat DC Current Gain hFE) — Low Power Losses (On–State and Switching Operations) — Fast Switching: tfi = 100 ns (typ) and tsi = 3.2 µs (typ) — Fast Switching: @ IC = 2.0 A, IB1 = IB2 = 0.4 A Full Characterization at 125°C Tight Parametric Distributions Consistent Lot–to–Lot BUL45F, Case 221D, is UL Recognized at 3500 VRMS: File #E69369 MAXIMUM RATINGS
Rating Collector–Emitter Sustaining Voltage Collector–Emitter Breakdown Voltage Emitter–Base Voltage Collector Current — Continuous — Peak(1) Base Current RMS Isolated Voltage(2) (for 1 sec, R.H. < 30%, TC = 25°C) Total Device Dissipation Derate above 25°C Operating and Storage Temperature Test No. 1 Per Fig. 22a Test No. 2 Per Fig. 22b Test No. 3 Per Fig. 22c (TC = 25°C) Symbol VCEO VCES VEBO IC ICM IB VISOL — — — 75 0.6 BUL45 400 700 9.0 5.0 10 2.0 4500 3500 1500 35 0.28 BUL45F Unit Vdc Vdc Vdc Adc Adc Volts
POWER
TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS
BUL45 CASE 221A–06 TO–220AB
PD TJ, Tstg
Watts W/°C °C BUL45F CASE 221D–02 ISOLATED TO–220 TYPE UL RECOGNIZED
– 65 to 150
THERMAL CHARACTERISTICS
Rating Thermal ...