BUL53BSMD
MECHANICAL DATA Dimensions in mm
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER...
BUL53BSMD
MECHANICAL DATA Dimensions in mm
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED
NPN SILICON POWER
TRANSISTOR
3 .6 0 (0 .1 4 2 ) M a x .
0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 )
1
3
1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )
2
CERAMIC SURFACE MOUNT PACKAGE FULL MIL/AEROSPACE TEMPERATURE RANGE SCREENING OPTIONS FOR MILITARY AND SPACE APPLICATIONS SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE (VCBO = 800V) FAST SWITCHING (tf = 100ns) HIGH ENERGY RATING
0 .7 6 (0 .0 3 0 ) m in .
1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 )
9 .6 9 .3 1 1 .5 1 1 .2
7 (0 8 (0 8 (0 8 (0
.3 8 .3 6 .4 5 .4 4
1 )
9 ) 6 ) 4 )
0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 )
FEATURES
Multi-Base design for efficient energy distribution across the chip. SIgnificantly improved switching and energy ratings across full temperature range. Ion implant and high accuracy masking for tight control of characteristics from batch to batch. Triple guard rings for improved control of high voltages.
SMD1
Pad 1 – Base Pad 2 – Collector Pad 3 – Emitter
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO VCEO VEBO IC IC(PK) IB PD R? Tj Tstg Collector – Base Voltage Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Collector Current Peak Collector Current Base Current Power Dissipation Thermal Impedance (when mounted on thermally conducting PCB)...
