GPT07N50

GENERAL DESCRIPTION GPT07N50 POWER FIELD EFFECT TRANSISTOR FEATURES This advanced high voltage MOSFET is designed to withstand Higher Current Rating high energy in the avalanche mode and switch efficiently. This Lower Rds(on) new high energy device also offers a drain-to-source diode Lower Capacitances with fast recovery time. Designed for high voltage, high speed Lower Total Gate Charge switching applications such as power supplies, converters, Tighter VSD Specifications power motor controls and bridge circuits. Avalanche Energy Specified PIN CONFIGURATION SYMBOL TO-220/TO-220FP Top View TO-251 Front View TO-252 Front View D GATE DRAIN SOURCE GATE DRAIN SOURCE G 12 3 123 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Drain to Current － Continuous Rating － Pulsed Gate-to-Source Voltage － Continue Total Power Dissipation TO-251,252 TO-220 TO-220FP Derate above 25℃ TO-251, 252 TO-220 TO-220FP Operating and Storage Temperature Range Single Pulse Dr...